IKW15T120 Infineon Technologies, IKW15T120 Datasheet - Page 12

IGBT 1200V 30A 110W TO247-3

IKW15T120

Manufacturer Part Number
IKW15T120
Description
IGBT 1200V 30A 110W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW15T120

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
110W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
30A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
110W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Power Dissipation Pd
110W
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
30.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKW15T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IKW15T120
Quantity:
8 500
Part Number:
IKW15T120FKSA1
Manufacturer:
JST
Quantity:
3 400
Power Semiconductors
40A
30A
20A
10A
Figure 27. Typical diode forward current as
0A
0V
a function of forward voltage
V
F
,
FORWARD VOLTAGE
1V
T
J
=25°C
150°C
2V
TrenchStop Series
12
Figure 28. Typical diode forward voltage as a
2,0V
1,5V
1,0V
0,5V
0,0V
®
I
F
=30A
-50°C
15A
8A
5A
function of junction temperature
T
J
,
JUNCTION TEMPERATURE
0°C
IKW15T120
50°C
Rev. 2.2 May 06
100°C

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