IHW20T120 Infineon Technologies, IHW20T120 Datasheet - Page 8

• Manufacturer Part Number: IHW20T120
• Description: IGBT 1200V 40A 178W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW20T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 178W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 178W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 40.0 A
• Ic(max) @ 100°: 20.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
6 m J
5 m J
4 m J
3 m J
2 m J
1 m J
0 m J
8 ,0m J
6 ,0m J
4 ,0m J
2 ,0m J
0 ,0m J
E
5A
E
ts
E
*) E
*
on
o ff
*
*) E
d u e to d io d e re c o v e ry
5 0 °C
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
10A
on
due to diode recov ery
J
I
CE
GE
,
C
on
a n d E
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
COLLECTOR CURRENT
and E
1 5A
E
ts
ts
ts
*
in c lu d e lo s s e s
include los ses
20A
C
GE
1 0 0 °C
=20A, R
=0/15V, R
J
CE
=150°C,
25A
=600V,
G
=35Ω,
3 0A
G
E
E
=35Ω,
off
on
1 5 0 °C
*
Soft Switching Series
35A
40
8
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
5m J
4m J
3m J
2m J
1m J
0m J
7 mJ
6 mJ
5 mJ
4 mJ
3 mJ
2 mJ
1 mJ
0 mJ
400V
E
E
E
*) E
V
ts
*) E
*
off
on
CE
due to diode recovery
*
due to diode recovery
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
,
on
500V
on
CE
COLLECTOR
GE
and E
and E
=600V, V
=0/15V, I
R
G
,
GATE RESISTOR
ts
ts
600V
include losses
include losses
-
C
GE
EMITTER VOLTAGE
=20A, R
IHW20T120
=0/15V, I
J
J
=150°C,
=150°C,
700V
G
Rev. 2.2 May 06
=35Ω,
C
=20A,
800V
E
E
E
off
on
ts
*
*