IHW30N90R Infineon Technologies, IHW30N90R Datasheet
IHW30N90R
Specifications of IHW30N90R
Available stocks
Related parts for IHW30N90R
IHW30N90R Summary of contents
Page 1
... J-STD-020 and JESD-022 Power Semiconductors Soft Switching Series CE(sat) 1 for target applications V T Marking CE(sat),Tj=25°C j,max 1.5V H30R90 175 C Symbol jmax 1200V, T 150 jmax < IHW30N90R PG-TO-247-3-21 Package PG-TO-247-3-21 Value Unit 900 454 W -40...+175 C -55...+175 C 260 Rev. 2.0 July 06 ...
Page 2
... Zero gate voltage collector current Gate-emitter leakage current Power Semiconductors Soft Switching Series Symbol Conditions Symbol Conditions . IHW30N90R q Max. Value Unit 0.33 K/W 0.33 40 Value Unit min. Typ. max. 900 - - V - 1.5 1 1.4 1 1.45 - 5.1 5.8 6 2500 - - 600 nA Rev. 2.0 July 06 ...
Page 3
... Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Power Semiconductors Soft Switching Series = Symbol Conditions =175 C j Symbol Conditions IHW30N90R q - 2889 - 200 - Value Unit min. Typ. Max. - 511 - - 1. 1.46 - Value Unit min. Typ. max. - 594 - - 2 2.1 - Rev. 2.0 July 06 ...
Page 4
... C 10A =110° 100kHz 1V Figure 2. IGBT Safe operating area = 600V 50A 40A 30A 20A 10A 0A 25°C 125°C 150°C Figure 4. Collector current as a function of 4 IHW30N90R 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 C;V =15V 75°C 125° CASE TEMPERATURE ...
Page 5
... Power Semiconductors Soft Switching Series 80A 70A 60A 50A 40A 30A 20A 10A 0A 0.0V 2.0V 2. Figure 6. Typical output characteristic 2.0V 1.5V 1.0V 0.5V 0. Figure 8. Typical collector-emitter 5 IHW30N90R V =20V GE 15V 13V 11V 9V 7V 0.5V 1.0V 1.5V 2.0V 2. COLLECTOR EMITTER VOLTAGE (T = 175° =30A C I 50° ...
Page 6
... Figure 10. Typical switching times as a =15Ω 125°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as =600V, =15Ω IHW30N90R t d(off GATE RESISTOR G function of gate resistor (inductive load, T =175° =600V, V =0/15V, I =30A Dynamic test circuit in Figure E) 0°C 50° ...
Page 7
... Power Semiconductors Soft Switching Series 3.0mJ E off 2.0mJ 1.0mJ 0.0mJ 40A 50A Figure 14. Typical switching energy losses =15Ω off =600V, =15Ω IHW30N90R E off R , GATE RESISTOR function of gate resistor (inductive load, T =175° =600V, V =0/15V, I =30A Dynamic test circuit in Figure E) Rev. 2.0 ...
Page 8
... K 10ms 100ms 10µs Figure 19. Typical Diode transient thermal impedance as a function of pulse width (D=t / IHW30N90R 10V 20V , - COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage (V =0V MHz) GE D=0.5 0.2 0 0.0842 6.67*10 0.1202 9.59*10 0.05 0.0877 7.33*10 0.0385 8.56*10 0. 0.01 single pulse ...
Page 9
... Figure 20. Typical diode forward current as a function of forward voltage Power Semiconductors Soft Switching Series 2.0V 1.5V 1.0V 0.5V 0.0V 1.5V 2.0V Figure 21. Typical diode forward voltage as a function of junction temperature 9 IHW30N90R I =60A F 30A 15A 50°C 100°C 150° JUNCTION TEMPERATURE J Rev. 2.0 ...
Page 10
... PG-TO247-3-21 Power Semiconductors Soft Switching Series 10 IHW30N90R q Rev. 2.0 July 06 ...
Page 11
... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Soft Switching Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit 11 IHW30N90R Rev. 2.0 July 06 ...
Page 12
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors Soft Switching Series 12 IHW30N90R q Rev. 2.0 July 06 ...