SKW30N60 Infineon Technologies, SKW30N60 Datasheet - Page 3

• Manufacturer Part Number: SKW30N60
• Description: IGBT NPT 600V 41A 250W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW30N60

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 41 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 41.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKW30N60XK

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
b
t
t
t
t
E
E
E
t
t
t
Q
I
d i
t
t
t
t
E
E
E
t
t
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/ d t
/ d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
j
j
j
C C
G E
R
C C
G E
R
G
G
= 25 C ,
= 25 C ,
F
= 150 C
= 150 C
F
1 )
1 )
1 )
1 )
= 20 0 V , I
= 20 0 V , I
= 11 ,
= 1 1 ,
/d t= 200A/ s
/d t= 200A/ s
3
= 40 0 V, I
= 0 /1 5 V,
= 40 0 V, I
= 0 /1 5 V,
Conditions
Conditions
=1 80nH ,
=9 00p F
=1 80nH ,
=9 00p F
F
F
C
C
=30A,
=30A,
=30A,
=30A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKW30N60
Value
Value
1740
0.64
0.65
1.29
0.98
0.92
1.90
typ.
typ.
291
400
368
610
180
324
520
464
200
5.5
9.0
44
34
58
32
44
34
67
56
Rev. 2_2
max.
max.
0.77
0.85
1.62
1.18
1.19
2.38
349
389
53
40
70
53
40
80
-
-
-
-
-
-
-
-
-
-
-
-
Sep 08
Unit
ns
mJ
ns
nC
A
A/ s
Unit
ns
mJ
ns
nC
A
A/ s