IKW25T120 Infineon Technologies, IKW25T120 Datasheet - Page 13
![IGBT 1200V 50A 190W TO247-3](/photos/22/7/220717/ge3to24705-40_sml.jpg)
IKW25T120
Manufacturer Part Number
IKW25T120
Description
IGBT 1200V 50A 190W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Specifications of IKW25T120
Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
50A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
190W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Power Dissipation Pd
190W
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
50.0 A
Ic(max) @ 100°
25.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IKW25T120
Manufacturer:
APT
Quantity:
3 000
Part Number:
IKW25T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Power Semiconductors
60A
40A
20A
Figure 27. Typical diode forward current as
0A
0V
a function of forward voltage
V
F
,
FORWARD VOLTAGE
1V
T
J
=25°C
150°C
2V
TrenchStop Series
13
Figure 28. Typical diode forward voltage as a
2,0V
1,5V
1,0V
0,5V
0,0V
®
I
F
=50A
-50°C
25A
15A
8A
function of junction temperature
T
J
,
JUNCTION TEMPERATURE
0°C
IKW25T120
50°C
Rev. 2.1
100°C
May 06