IGW60T120 Infineon Technologies, IGW60T120 Datasheet - Page 7

• Manufacturer Part Number: IGW60T120
• Description: IGBT 1200V 100A 375W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW60T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 60A
• Current - Collector (ic) (max): 100A
• Power - Max: 375W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 375W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 100.0 A
• Ic(max) @ 100°: 60.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
30,0mJ
25,0mJ
20,0mJ
15,0mJ
10,0mJ
16mJ
14mJ
12mJ
10mJ
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
5,0mJ
0,0mJ
8mJ
6mJ
4mJ
*) E
*) E
20A
due to diode recovery
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
50°C
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
due to diode recovery
on
J
I
CE
GE
on
,
C
and E
,
JUNCTION TEMPERATURE
and E
=600V, V
=0/15V, I
COLLECTOR CURRENT
ts
40A
ts
include losses
include losses
C
GE
=60A, R
100°C
=0/15V, R
J
CE
60A
=150°C,
=600V,
E
E
off
on
G
*
=10Ω,
G
=10Ω,
80A
150°C
TrenchStop
E
E
E
E
on
off
7
ts
ts
*
*
*
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
®
20 mJ
15 mJ
10 mJ
25mJ
20mJ
15mJ
10mJ
5 mJ
5mJ
Series
400V
5Ω
E
E
V
E
E
E
ts
on
off
CE
*
*) E
off
on
*
*) E
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
*
,
due to diode recovery
due to diode recovery
CE
GE
COLLECTOR
on
on
500V
=600V, V
=0/15V, I
and E
and E
R
G
15Ω
,
GATE RESISTOR
ts
ts
include losses
include losses
600V
-
C
GE
EMITTER VOLTAGE
IGW60T120
=60A, R
=0/15V, I
25Ω
J
J
=150°C,
=150°C,
700V
Rev. 2.4
G
=10Ω,
C
=60A,
35Ω
800V
Nov. 09
E
ts
*