IKW40T120 Infineon Technologies, IKW40T120 Datasheet - Page 12

IGBT 1200V 75A 270W TO247-3

IKW40T120

Manufacturer Part Number
IKW40T120
Description
IGBT 1200V 75A 270W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW40T120

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
270W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
75A
Collector Emitter Voltage Vces
2.3V
Power Dissipation Max
270W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Power Dissipation Pd
270W
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
75.0 A
Ic(max) @ 100°
40.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKW40T120
Manufacturer:
INFINEON
Quantity:
15 000
Part Number:
IKW40T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IKW40T120
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Part Number:
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Manufacturer:
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Quantity:
12 000
Power Semiconductors
40A
35A
30A
25A
20A
15A
10A
Figure 23. Typical reverse recovery time as
Figure 25. Typical reverse recovery current
5A
0A
600ns
500ns
400ns
300ns
200ns
100ns
400A/µs
0ns
400A/µs
di
di
a function of diode current slope
(V
Dynamic test circuit in Figure E)
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
F
F
/dt,
/dt,
R
R
=600V, I
=600V, I
600A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
600A/µs
F
F
=40A,
=40A,
800A/µs
800A/µs
1000A/µs
T
T
1000A/µs
J
J
T
=150°C
=25°C
T
J
=150°C
J
=25°C
TrenchStop Series
12
Figure 24. Typical reverse recovery charge
Figure 26. Typical diode peak rate of fall of
8µC
6µC
4µC
2µC
0µC
-400A/µs
-300A/µs
-200A/µs
-100A/µs
®
-0A/µs
400A/µs
400A/µs
di
di
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
reverse recovery current as a
function of diode current slope
(V
Dynamic test circuit in Figure E)
F
F
/dt,
/dt,
R
R
=600V, I
=600V, I
600A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
600A/µs
F
F
=40A,
=40A,
IKW40T120
800A/µs
800A/µs
Rev. 2.1
1000A/µs
T
1000A/µs
J
T
=150°C
T
J
T
=25°C
J
J
=150°C
=25°C
May 06

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