IKW40N120T2 Infineon Technologies, IKW40N120T2 Datasheet - Page 7

• Manufacturer Part Number: IKW40N120T2
• Description: IGBT 1200V 75A 480W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW40N120T2

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 480W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 480W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™2 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 75.0 A
• Ic(max) @ 100°: 40.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
1000ns
100ns
Figure 9.
Figure 11. Typical switching times as a
100ns
10ns
10ns
1ns
t
t
f
d(off)
t
t
t
r
t
d(off)
t
d(on)
f
t
r
d(on)
Typical switching times as a
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
T
C
GE
=40A, R
J
I
0°C
,
C
=0/15V, R
,
JUNCTION TEMPERATURE
20A
COLLECTOR CURRENT
G
=12Ω,
50°C
G
=12Ω,
40A
J
CE
=175°C, V
=600V, V
100°C
60A
CE
GE
=600V,
=0/15V,
TrenchStop
150°C
7
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as a
1000 ns
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
®
100 ns
10 ns
2
nd
Generation Series
t
t
t
d(on)
d(off)
f
t
r
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(I
T
C
GE
J
0°C
= 1.5mA)
,
=0/15V, I
JUNCTION TEMPERATURE
R
G
,
GATE RESISTOR
IKW40N120T2
C
50°C
=40A,
J
=175°C, V
100°C
Rev. 2.2
CE
min.
typ.
=600V,
max.
150°C
Sep 08