HGTP2N120CN Fairchild Semiconductor, HGTP2N120CN Datasheet
HGTP2N120CN
Specifications of HGTP2N120CN
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HGTP2N120CN Summary of contents
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... Fairchild Semiconductor Corporation HGTP2N120CN, HGT1S2N120CN Rev. C Description The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...
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... V Gate to Emitter Threshold Voltage GE(TH) I Gate to Emitter Leakage Current GES SSOA Switching SOA V Gate to Emitter Plateau Voltage GEP Q On-State Gate Charge g(ON) HGTP2N120CN, HGT1S2N120CN Rev 25°C, Unless Otherwise Specified C Parameter = 150°C (Figure 25°C C > 25° 15V 25°C unless otherwise noted ...
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... OFF current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method CE produces the true total Turn-Off Energy Loss. HGTP2N120CN, HGT1S2N120CN Rev 25°C unless otherwise noted (Continued) C Test Conditions IGBT and Diode 25° ...
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... C/W, SEE NOTES Ø COLLECTOR TO EMITTER CURRENT (A) CE Figure 5. Collector to Emitter On-State Voltage - DUTY CYCLE <0.5%, V 250µS PULSE TEST COLLECTOR TO EMITTER VOLTAGE (V) CE HGTP2N120CN, HGT1S2N120CN Rev. C Figure 2. Minimum Switching Safe Operating 15V 100 125 150 o C) Figure 4. Short Circuit Withstand Time ...
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... V = 12V 15V 100 1.0 1.5 2.0 2.5 3 COLLECTOR TO EMITTER CURRENT (A) CE HGTP2N120CN, HGT1S2N120CN Rev. C (Continued) Figure 8. Turn-Off Energy Loss vs Collector to 900 800 700 600 500 400 300 200 12V 15V GE GE 100 3.5 4.0 4.5 5.0 Figure 10. Turn-On Rise Time vs Collector to ...
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... C IES 1.0 0.5 C OES C RES COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 17. Normalized Transient Thermal Response, Junction to Case 0 10 0.5 0.2 0 0.05 0.02 0.01 SINGLE PULSE - HGTP2N120CN, HGT1S2N120CN Rev. C (Continued) Figure 14. Gate Charage Waveforms Figure 16. Collector to Emitter On-Sate Voltage RECTANGULAR PULSE DURATION (s) ...
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... Test Circuit and Waveforms Figure 18. Inductive Switching Test Circuit RHRD4120 L = 5mH R = 51Ω G HGTP2N120CN, HGT1S2N120CN Rev. C (Continued) Figure 19. Switching Test Waveforms 90 960V d(OFF)I 7 90% 10% E ON2 E OFF 10 d(ON)I www.fairchildsemi.com ...
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... Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required, an external Zener is recommended. HGTP2N120CN, HGT1S2N120CN Rev. C Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete HGTP2N120CN, HGT1S2N120CN Rev. C IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...