HGT1S2N120CN Fairchild Semiconductor, HGT1S2N120CN Datasheet
HGT1S2N120CN
Specifications of HGT1S2N120CN
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HGT1S2N120CN Summary of contents
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... HGTP2N120CN TO-220AB HGT1S2N120CN TO-262 Note: When ordering, use the entire part number. Add the suffix 9A to obtain the TO- 263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A. COLLECTOR (FLANGE) FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 ...
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... V Gate to Emitter Threshold Voltage GE(TH) I Gate to Emitter Leakage Current GES SSOA Switching SOA V Gate to Emitter Plateau Voltage GEP Q On-State Gate Charge g(ON) HGTP2N120CN, HGT1S2N120CN Rev 25°C, Unless Otherwise Specified C Parameter = 150°C (Figure 25°C C > 25° 15V 25°C unless otherwise noted ...
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... OFF current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method CE produces the true total Turn-Off Energy Loss. HGTP2N120CN, HGT1S2N120CN Rev 25°C unless otherwise noted (Continued) C Test Conditions IGBT and Diode 25° ...
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... C/W, SEE NOTES Ø COLLECTOR TO EMITTER CURRENT (A) CE Figure 5. Collector to Emitter On-State Voltage - DUTY CYCLE <0.5%, V 250µS PULSE TEST COLLECTOR TO EMITTER VOLTAGE (V) CE HGTP2N120CN, HGT1S2N120CN Rev. C Figure 2. Minimum Switching Safe Operating 15V 100 125 150 o C) Figure 4. Short Circuit Withstand Time ...
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... V = 12V 15V 100 1.0 1.5 2.0 2.5 3 COLLECTOR TO EMITTER CURRENT (A) CE HGTP2N120CN, HGT1S2N120CN Rev. C (Continued) Figure 8. Turn-Off Energy Loss vs Collector to 900 800 700 600 500 400 300 200 12V 15V GE GE 100 3.5 4.0 4.5 5.0 Figure 10. Turn-On Rise Time vs Collector to ...
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... C IES 1.0 0.5 C OES C RES COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 17. Normalized Transient Thermal Response, Junction to Case 0 10 0.5 0.2 0 0.05 0.02 0.01 SINGLE PULSE - HGTP2N120CN, HGT1S2N120CN Rev. C (Continued) Figure 14. Gate Charage Waveforms Figure 16. Collector to Emitter On-Sate Voltage RECTANGULAR PULSE DURATION (s) ...
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... Test Circuit and Waveforms Figure 18. Inductive Switching Test Circuit RHRD4120 L = 5mH R = 51Ω G HGTP2N120CN, HGT1S2N120CN Rev. C (Continued) Figure 19. Switching Test Waveforms 90 960V d(OFF)I 7 90% 10% E ON2 E OFF 10 d(ON)I www.fairchildsemi.com ...
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... Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required, an external Zener is recommended. HGTP2N120CN, HGT1S2N120CN Rev. C Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete HGTP2N120CN, HGT1S2N120CN Rev. C IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...