FGPF30N30 Fairchild Semiconductor, FGPF30N30 Datasheet - Page 4

• Manufacturer Part Number: FGPF30N30
• Description: IGBT PDP 300V 80A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of FGPF30N30

• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 1.5V @ 15V, 10A
• Power - Max: 46W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -
• Igbt Type: -

FGPF30N30 Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs.V
Figure 9. Gate Charge Characteristics
Figure 11. Turn-On Characteristics vs.
100
15
12
10
20
16
12
9
6
3
0
1
8
4
0
0
0
0
Common Emitter
R
T
C
L
Gate Resistance
= 10
= 25
20A
Ω
o
t
t
C
20
r
d(on)
I
8
4
C
Gate-Emitter Voltage, V
= 10A
Gate Resistance, R
Gate Charge, Q
V
16
40
cc
8
= 100V
30A
Common Emitter
V
I
T
T
C
C
C
CC
= 20A
12
24
60
= 25
= 125
g
= 200V, V
[nC]
Common Emitter
T
G
C
o
C
GE
o
[
= 125
GE
C
Ω
]
[V]
200V
16
32
80
GE
o
C
= 15V
100
20
40
(Continued)
4
Figure 12. Turn Off Characteristics vs.
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
2500
1000
1000
0.01
200
100
100
100
0.1
10
10
10
1
0.1
0
0
Common Emitter
V
T
Single Nonrepetitive
Pulse Tc=25
Curves must be derated
linearly with increase
in temperature
C
Gate Resistance
GE
= 25
= 0V, f = 1MHz
Collector-Emitter Voltage, V
10
Collector-Emitter Voltage, V
5
o
C
1
Gate Resistance, R
DC Operation
o
20
C
10
30
10
15
C
C
ies
40
Common Emitter
V
I
T
T
oes
C
C
C
CC
1ms
= 20A
= 25
= 125
G
100us
20
= 200V, V
[ Ω ]
CE
100
50
o
C
C
CE
o
C
res
[V]
50us
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[V]
t
f
25
t
GE
d(off)
60
= 15V
1000
30
70