FGH30N120FTDTU Fairchild Semiconductor, FGH30N120FTDTU Datasheet

IGBT TRENCH 1200V 30A TO-247

FGH30N120FTDTU

Manufacturer Part Number
FGH30N120FTDTU
Description
IGBT TRENCH 1200V 30A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGH30N120FTDTU.pdf (9 pages)

Specifications of FGH30N120FTDTU

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 30A
Current - Collector (ic) (max)
60A
Power - Max
339W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 25 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FGH30N120FTD
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
FGH30N120FTD
1200V, 30A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
• RoHS compliant
Applications
• Induction heating and Microwave oven
• Soft switching applications
V
V
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Rev. A
Thermal Resistance, Junction to Case
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CE(sat)
= 1.6V @ I
Description
Parameter
E
COLLECTOR
C
(FLANGE)
C
G
= 30A
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
1
= 25
= 100
= 25
= 100
= 25
= 100
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
o
o
o
C
C
C
o
o
o
C
C
C
Typ.
-
-
-
G
-55 to +150
-55 to +150
Ratings
1200
± 25
339
132
300
60
30
90
30
Max.
0.38
1.2
C
E
40
November 2008
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
C
C
C
tm

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FGH30N120FTDTU Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation Rev. A FGH30N120FTD General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGH30N120FTD FGH30N120FTDTU Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage V CES I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage GE(th) V Collector to Emitter Saturation Voltage CE(sat) ...

Page 3

Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGH30N120FTD Rev 25°C unless otherwise noted ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 20V 150 17V 15V 120 Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter V ...

Page 5

Typical Performance Characteristics Figure 7. Saturation Voltage vs 60A 4 30A I = 15A Gate-Emitter Voltage, V Figure 9. Gate charge Characteristics 15 Common Emitter ...

Page 6

Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 1000 Common Emitter Ω 15V 125 C C 100 Collector ...

Page 7

Typical Performance Characteristics Figure 19. Reverse Current 50 200A di/dt = 100A Forward Current, I Figure 21. Reverse Recovery Time 1000 di/dt = 100A/ 800 200A/ 600 400 10 20 Forward Current, I Figure 22. ...

Page 8

Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Rev. A FGH30N120FTD 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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