SGP30N60 Infineon Technologies, SGP30N60 Datasheet
SGP30N60
Specifications of SGP30N60
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SGP30N60 Summary of contents
Page 1
... Avalanche energy, single pulse start Short circuit withstand time V = 15V, V 600V, T 150 Power dissipation Operating junction and storage temperature 1) Allowed number of short circuits: <1000; time between short circuits: >1s. SGP30N60, P-TO-220-3-1 (TO-220AB) http://www.infineon.com/igbt Package C CE(sat) j 2.5V TO-220AB 150 C TO-263AB TO-247AC Symbol jmax ...
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... Internal emitter inductance measured 5mm (0.197 in.) from case 2) Short circuit collector current 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. SGP30N60, Symbol Conditions TO-220AB TO-247AC ...
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... Turn-off energy Total switching energy Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy 1) Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. SGP30N60, = Symbol Conditions ...
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... T , CASE TEMPERATURE C Figure 3. Power dissipation as a function of case temperature (T 150 C) j SGP30N60, 100A 10A 1A 0.1A 1V 100kHz V , COLLECTOR CE Figure 2. Safe operating area ( 60A 50A Limited by bond wire 40A 30A 20A 10A 0A 125° ...
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... T =+25°C j 80A +150°C 70A 60A 50A 40A 30A 20A 10A GATE EMITTER VOLTAGE GE Figure 7. Typical transfer characteristics (V = 10V) CE SGP30N60, 90A 80A 70A 60A V GE 50A 40A 30A 20A 10A Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V -55°C 3.0V 2 ...
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... JUNCTION TEMPERATURE j Figure 11. Typical switching times as a function of junction temperature (inductive load 400V 30A Dynamic test circuit in Figure E) SGP30N60, 1000ns 100ns 10ns 50A 60A 0 Figure 10. Typical switching times as a function of gate resistor (inductive load 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4 ...
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... T , JUNCTION TEMPERATURE j Figure 15. Typical switching energy losses as a function of junction temperature (inductive load 400V 30A Dynamic test circuit in Figure E) SGP30N60, 4.0mJ due to diode recovery. 3.5mJ 3.0mJ 2.5mJ E * 2.0mJ on E off 1.5mJ 1.0mJ 0.5mJ 0.0mJ 60A ...
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... GATE EMITTER VOLTAGE GE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (V = 600V, start SGP30N60, 1nF 480V 100pF 10pF 200nC COLLECTOR CE Figure 18. Typical capacitance as a function of collector-emitter voltage ( 1MHz) GE 500A 450A 400A 350A 300A 250A 200A ...
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... SGP30N60, TO-220AB 2 TO-263AB (D Pak) SGB30N60 SGW30N60 dimensions symbol [mm] min max A 9.70 10.30 B 14.88 15.95 C 0.65 0.86 D 3.55 3.89 E 2.60 3.00 F 6.00 6.80 G 13.00 14.00 H 4.35 4.75 K 0.38 0.65 L 0.95 1.32 M 2.54 typ. N 4.30 4.50 P 1.17 1.40 T 2.30 2.72 dimensions symbol [mm] ...
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... SGP30N60, TO-247AC 10 SGB30N60 SGW30N60 dimensions symbol [mm] [inch] min max min A 4.78 5.28 0.1882 B 2.29 2.51 0.0902 C 1.78 2.29 0.0701 D 1.09 1.32 0.0429 E 1.73 2.06 0.0681 F 2.67 3.18 0.1051 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 K 15.65 16.15 0.6161 L 5.21 5.72 0.2051 M 19 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses SGP30N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 11 SGB30N60 SGW30N60 =180nH =900pF. Jul-02 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGP30N60, 12 SGB30N60 ...