MMBF5103 Fairchild Semiconductor, MMBF5103 Datasheet
MMBF5103
Manufacturer Part Number
MMBF5103
Description
IC SWITCH N-CHANNEL SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBF5103.pdf
(3 pages)
Specifications of MMBF5103
Current - Drain (idss) @ Vds (vgs=0)
10mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
1.2V @ 1nA
Input Capacitance (ciss) @ Vds
16pF @ 15V
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
350mW
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
350 mW
Gate-source Breakdown Voltage
- 40 V
Gate-source Cutoff Voltage
- 2.7 V
Drain Current (idss At Vgs=0)
2 mA to 15 mA
Forward Transconductance Gfs (max / Min)
0.0075 S to 0.015 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
40 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Channel Type
N
Gate-source Voltage (max)
-40V
Pin Count
3
Drain-gate Voltage (max)
40V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBF5103
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2003 Fairchild Semiconductor Corporation
N-Channel Switch
• This device is designed for low level analog switching, sample and
• Sourced from Process 51.
• See J111 for characteristics.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
V
V
I
T
Off Characteristics
V
I
V
V
On Characteristics
I
Small Signal Characteristics
C
C
P
R
GF
GSS
DSS
hold circuits and chopper stabilized amplifiers.
J
DG
GS
(BR)GSS
GS(off)
GS(f)
D
ISS
rss
Symbol
Symbol
, T
JA
Symbol
STG
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Forward Voltage
Zero-Gate Voltage Drain Current *
Input Capacitance
Reverse Transfer Capacitance
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
1.0%
Parameter
T
a
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
a
=25 C unless otherwise noted
MMBF5103
I
V
V
V
I
V
V
V
G
G
GS
GS
DS
DS
DS
GS
= 1.0 A, V
= 1.0mA, V
= 20V, I
= 15V, V
= 15V, V
= -15V, V
= -15V, V
= -15V, f = 1.0MHz
Test Condition
D
DS
GS
GS
DS
DS
DS
= 1.0nA
= 0
= 0
= 0, f = 1.0MHz
= 0
= 0
= 0, T
a
= 125 C
Max.
350
556
2.8
1. Drain 2. Source 3. Gate
- 55 ~ 150
G
Value
-40
40
50
Min.
-1.2
-40
10
D
Max.
-200
-500
-2.7
1.0
6.0
40
16
mW/ C
Units
mW
C/W
Rev. A, September 2003
SOT-23
Mark: 66A
S
Units
mA
Units
V
V
C
mA
pA
nA
pF
pF
V
V
V
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MMBF5103 Summary of contents
Page 1
... Reverse Transfer Capacitance rss * Pulse Test: Pulse Width 300 s, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA ©2003 Fairchild Semiconductor Corporation MMBF5103 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition -15V, V ...
Page 2
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2003 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, September 2003 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...