FDC6333C Fairchild Semiconductor, FDC6333C Datasheet - Page 2

• Manufacturer Part Number: FDC6333C
• Description: MOSFET N-CH/P-CHAN 30V SSOT6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6333C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 282pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.095 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 7 S, 3 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 2.5 A @ N Channel or 2 A @ P Channel
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 95mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6333CTR

Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
T
T
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
T
A
V
V
I
I
V
V
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
For Q1:
V
V
For Q2:
V
V
For Q1:
V
V
For Q2:
V
V
D
D
D
D
= 25°C unless otherwise noted
GS
GS
DS
DS
GS
GS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
GS
= 250 A,Ref. to 25 C
= –250 A,Ref. to 25 C
= 250 A,Ref. To 25 C
= –250 A,Ref. to 25 C
=15 V, V
=–15 V, V
=15 V, V
=–15 V, V
=15 V, V
=–15 V, V
= 10 V,
= –10 V, R
= 10 V,
= –10 V,
=15 V,
=–15 V,
=15 V,
=–15 V,
= 0 V,
= 0 V,
= 24 V,
= –24 V, V
= 16 V,
= 25 V,
= –16 V, V
= –25 V, V
= V
= V
= 10 V,
= 4.5 V, I
= 10 V, I
= –10 V, I
=– 4.5 V, I
= 10 V, I
= 10 V,
= –10 V, V
= 5 V
= –5 V
Test Conditions
GS
GS
, I
, I
D
D
GS
GS
GS
D
D
= –2.0 A,T
I
I
= 250 A
= –250 A
GS
GS
GS
= 2.5 A,T
V
V
V
I
V
I
I
I
R
I
I
R
I
D
D
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
D
D
D
D
D
D
DS
DS
DS
DS
GS
GS
DS
DS
DS
DS
DS
DS
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
GEN
GEN
GEN
= 250 A
= –250 A
= 2.5 A
= 2.0 A
= 2.5 A
= –2.0A
= –2.0 A
= –1.7 A
= 1 A
= –1 A
= 2.5 A
= –2.0 A
= 0 V
= 0 V
= 0 V
= 0 V
= 5 V
= 0 V
= 0 V
= –5 V
= 6
= 6
= 6
J
J
=125 C
=125 C
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min
–30
30
–1
–8
1
8
Typ Max Units
106
142
149
–1.8
–22
73
90
95
282
185
4.5
4.5
13
19
11
1.5
0.9
0.8
0.6
0.4
1.8
27
–4
7
3
49
56
20
26
6
2
4.7
4.1
4
–100
–100
100
100
150
148
130
220
216
6.6
5.7
–1
–3
95
12
23
34
20
1
3
9
9
3
4
FDC6333C Rev C (W)
mV/ C
mV/ C
m
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A