FDC6333C Fairchild Semiconductor, FDC6333C Datasheet - Page 2
![MOSFET N-CH/P-CHAN 30V SSOT6](/photos/5/42/54216/261-supersot-6_sml.jpg)
FDC6333C
Manufacturer Part Number
FDC6333C
Description
MOSFET N-CH/P-CHAN 30V SSOT6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC6333C.pdf
(8 pages)
Specifications of FDC6333C
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
95 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A, 2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
6.6nC @ 10V
Input Capacitance (ciss) @ Vds
282pF @ 15V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.095 Ohm @ 10 V @ N Channel
Forward Transconductance Gfs (max / Min)
7 S, 3 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V @ N Channel or +/- 25 V @ P Channel
Continuous Drain Current
2.5 A @ N Channel or 2 A @ P Channel
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
95mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.8V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6333CTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC6333C
Manufacturer:
FSC
Quantity:
16 000
Part Number:
FDC6333C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC6333C-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC6333C_NL
Manufacturer:
ON/安森美
Quantity:
20 000
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
T
T
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
T
A
V
V
I
I
V
V
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
For Q1:
V
V
For Q2:
V
V
For Q1:
V
V
For Q2:
V
V
D
D
D
D
= 25°C unless otherwise noted
GS
GS
DS
DS
GS
GS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
GS
= 250 A,Ref. to 25 C
= –250 A,Ref. to 25 C
= 250 A,Ref. To 25 C
= –250 A,Ref. to 25 C
=15 V, V
=–15 V, V
=15 V, V
=–15 V, V
=15 V, V
=–15 V, V
= 10 V,
= –10 V, R
= 10 V,
= –10 V,
=15 V,
=–15 V,
=15 V,
=–15 V,
= 0 V,
= 0 V,
= 24 V,
= –24 V, V
= 16 V,
= 25 V,
= –16 V, V
= –25 V, V
= V
= V
= 10 V,
= 4.5 V, I
= 10 V, I
= –10 V, I
=– 4.5 V, I
= 10 V, I
= 10 V,
= –10 V, V
= 5 V
= –5 V
Test Conditions
GS
GS
, I
, I
D
D
GS
GS
GS
D
D
= –2.0 A,T
I
I
= 250 A
= –250 A
GS
GS
GS
= 2.5 A,T
V
V
V
I
V
I
I
I
R
I
I
R
I
D
D
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
D
D
D
D
D
D
DS
DS
DS
DS
GS
GS
DS
DS
DS
DS
DS
DS
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
GEN
GEN
GEN
= 250 A
= –250 A
= 2.5 A
= 2.0 A
= 2.5 A
= –2.0A
= –2.0 A
= –1.7 A
= 1 A
= –1 A
= 2.5 A
= –2.0 A
= 0 V
= 0 V
= 0 V
= 0 V
= 5 V
= 0 V
= 0 V
= –5 V
= 6
= 6
= 6
J
J
=125 C
=125 C
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min
–30
30
–1
–8
1
8
Typ Max Units
106
142
149
–1.8
–22
73
90
95
282
185
4.5
4.5
13
19
11
1.5
0.9
0.8
0.6
0.4
1.8
27
–4
7
3
49
56
20
26
6
2
4.7
4.1
4
–100
–100
100
100
150
148
130
220
216
6.6
5.7
–1
–3
95
12
23
34
20
1
3
9
9
3
4
FDC6333C Rev C (W)
mV/ C
mV/ C
m
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A