FDC6327C Fairchild Semiconductor, FDC6327C Datasheet - Page 7
![MOSFET N/P-CH DUAL 20V SSOT-6](/photos/5/42/54216/261-supersot-6_sml.jpg)
FDC6327C
Manufacturer Part Number
FDC6327C
Description
MOSFET N/P-CH DUAL 20V SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC6327C.pdf
(9 pages)
Specifications of FDC6327C
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A, 1.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
325pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
7.7 S, 4.5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.7 A @ N Channel or 1.9 A @ P Channel
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6327C
FDC6327CTR
FDC6327CTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC6327C
Manufacturer:
FSC
Quantity:
3 000
Company:
Part Number:
FDC6327C
Manufacturer:
Fairchild Semiconductor
Quantity:
277 661
Part Number:
FDC6327C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC6327C-NL
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
FDC6327C_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics: P-Channel
0.01
0.1
5
4
3
2
1
0
10
Figure 19. Maximum Safe Operating Area.
1
0
Figure 17. Gate-Charge Characteristics.
0.1
I
D
= -1.9A
SINGLE PULSE
R
V
R
JA
T
0.5
GS
DS(ON)
A
= 180
= 25
= -4.5V
-V
LIMIT
o
o
C
C/W
DS
1
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
DC
1.5
1s
100ms
10ms
V
DS
2
= -5.0V
1ms
10
100 s
2.5
-15V
3
-10V
100
3.5
(continued)
450
400
350
300
250
200
150
100
5
4
3
2
1
0
0.01
50
0
Figure 18. Capacitance Characteristics.
0
Figure 20. Single Pulse Maximum
0.1
4
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
1
C
8
ISS
10
C
12
OSS
C
RSS
SINGLE PULSE
R
100
JA
T
16
A
= 180
= 25
f = 1 MHz
V
FDC6327C, Rev. E
GS
o
o
C
= 0 V
C/W
1000
20