FDC6561AN Fairchild Semiconductor, FDC6561AN Datasheet

FDC6561AN

Manufacturer Part Number

FDC6561AN

Description

MOSFET N-CHAN DUAL 30V SSOT6

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Type

Power MOSFETr

Datasheet

1.FDC6561AN.pdf (5 pages)

Specifications of FDC6561AN

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

95 mOhm @ 2.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

2.5A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

3.2nC @ 5V

Input Capacitance (ciss) @ Vds

220pF @ 15V

Power - Max

700mW

Mounting Type

Surface Mount

Package / Case

6-SSOT, SuperSOT-6

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.095Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

±20V

Drain Current (max)

2.5A

Power Dissipation

960mW

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SuperSOT

Configuration

Dual

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.095 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

5 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2.5 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Module Configuration

Dual

Continuous Drain Current Id

2.5A

Drain Source Voltage Vds

30V

On Resistance Rds(on)

95mohm

Rds(on) Test Voltage Vgs

10V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDC6561ANTR

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Price

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Absolute Maximum Ratings

Symbol Parameter

THERMAL CHARACTERISTICS

DSS

GSS

FDC6561AN

These N-Channel

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

These devices are well suited for all applications where

small size is desireable but especially low cost DC/DC

conversion in battery powered systems.

General Description

Dual N-Channel Logic Level PowerTrench

STG

SOT-23

SuperSOT -6

Drain-Source Voltage

Gate-Source Voltage - Continuous

Drain Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

- Pulsed

SuperSOT

Logic

pin 1

Level

-6

MOSFETs are

= 25°C unless otherwise note

SuperSOT

(Note 1a)

(Note 1)

(Note 1a)

(Note 1b)

(Note 1c)

-8

2.5 A, 30 V. R

Very fast switching.

Low gate charge (2.1nC typical).

SuperSOT

standard SO-8); low profile (1mm thick).

Features

SO-8

MOSFET

-6 package: small footprint (72% smaller than

DS(ON)

-55 to 150

Ratings

0.96

±20

130

2.5

0.9

0.7

= 0.095

= 0.145

SOT-223

@ V

= 10 V

= 4.5 V

SOIC-16

FDC6561AN Rev.C

April 1999

Units

°C/W

°C

Related parts for FDC6561AN

FDC6561AN Summary of contents

Page 1

... SO-8); low profile (1mm thick). TM SuperSOT -8 SO 25°C unless otherwise note A (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) April 1999 = 0.095 @ DS(ON 0.145 @ V = 4.5 V DS(ON package: small footprint (72% smaller than SOIC-16 SOT-223 Ratings 30 ±20 2.5 10 0.96 0.9 0.7 -55 to 150 130 60 FDC6561AN Rev.C Units °C °C/W °C/W ...

Page 2

... C 0.005 in pad of 2oz copper. Min Typ Max 23 100 -100 1 1 0.082 0.095 125 C 0.122 0.152 J 0.113 0.145 10 5 220 2.3 3.2 0.7 1 0.9 1.3 0.75 0.78 1.2 (Note pad 180 C minimum pad. FDC6561AN Rev.C Units V o mV/ C µA µ mV guaranteed ...

Page 3

... Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1. 125° 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C A 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDC6561AN Rev 1.4 ...

Page 4

... Transient thermal response will change depending on the circuit board design. C iss C oss C rss = 0V 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =180°C 25° 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 180 °C P(pk ( Duty Cycle 100 300 FDC6561AN Rev.C 30 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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