FDMA1028NZ Fairchild Semiconductor, FDMA1028NZ Datasheet

IC MOSFET N-CH DUAL MICROFET 2X2

FDMA1028NZ

Manufacturer Part Number
FDMA1028NZ
Description
IC MOSFET N-CH DUAL MICROFET 2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA1028NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
68 mOhm @ 3.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
340pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.068 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
16 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.7 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA1028NZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA1028NZ
Manufacturer:
Fairchild Semiconductor
Quantity:
31 388
Part Number:
FDMA1028NZ
Manufacturer:
FSC
Quantity:
3 507
Part Number:
FDMA1028NZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMA1028NZ
Dual N-Channel PowerTrench MOSFET
General Description
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
20
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
R
Package Marking and Ordering Information
D
J
DS
GS
D
, T
JA
JA
JA
JA
Fairchild Semiconductor Corporation
Device Marking
STG
and
028
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
other
ultra-portable
MicroFET 2x2
FDMA1028NZ
– Continuous
– Pulsed
D1 G2 S2
Device
Parameter
D1
PIN 1
S1 G1
applications.
D2
D2
T
A
=25
o
It
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1d)
(Note 1c)
Features
3.7 A, 20V.
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
Free from halogenated compounds and antimony
oxides
HBM ESD protection level > 2kV (Note 3)
RoHS Compliant
S1
G1
D2
1
2
3
173 (Single Operation)
86 (Single Operation)
151 (Dual Operation)
69 (Dual Operation)
Tape width
R
R
–55 to +150
DS(ON)
DS(ON)
8mm
Ratings
3.7
1.4
0.7
20
12
6
= 68 m
= 86 m
@ V
@ V
October 2010
6
5
4
GS
GS
D1
G2
= 4.5V
= 2.5V
S2
3000 units
FDMA1028NZ Rev B6
Quantity
Units
C/W
tm
t
W
V
V
A
C

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FDMA1028NZ Summary of contents

Page 1

... Reel Size 7’’ t October 2010 4.5V DS(ON 2.5V DS(ON Ratings Units 3 1.4 0.7 –55 to +150 C 86 (Single Operation) 173 (Single Operation) C/W 69 (Dual Operation) 151 (Dual Operation) Tape width Quantity 8mm 3000 units FDMA1028NZ Rev B6 ...

Page 2

... Gate–Drain Charge 25°C unless otherwise noted A Test Conditions 250 250 A, Referenced ± 250 250 A, Referenced =125 3 1.0 MHz 4 GEN 3 4 Min Typ Max Units ±10 A 0.6 1.0 1.5 V mV/ C – 340 0 Ω 0.7 nC 1.1 nC FDMA1028NZ Rev B6 ...

Page 3

... The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material b)173 C/W when mounted on a minimum pad copper. is guaranteed by design while R is determined by the d)151 C/W when o c)69 C/W when mounted mounted minimum pad pad copper. copper. FDMA1028NZ Rev B6 ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.0V 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 1.85A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDMA1028NZ Rev 1.2 ...

Page 5

... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 173°C 25°C A 0.01 0 100 1000 t , TIME (sec) 1 Dissipation. R ( =173 °C/W JA P(pk ( Duty Cycle 100 1000 FDMA1028NZ Rev B6 20 ...

Page 6

... Dimensional Outline and Pad Layout FDMA1028NZ Rev B6 ...

Page 7

... TinyBoost™ TinyBuck™ TinyCalc™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Definition FDMA1028NZ Rev B6 ®* ® Rev. I48 ...

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