FDMA1025P Fairchild Semiconductor, FDMA1025P Datasheet

MOSFET P-CH DUAL 20V 3.1A MLP2X2

FDMA1025P

Manufacturer Part Number
FDMA1025P
Description
MOSFET P-CH DUAL 20V 3.1A MLP2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA1025P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
155 mOhm @ 3.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
450pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA1025PTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA1025P
Manufacturer:
FSC
Quantity:
3 122
©2010 Fairchild Semiconductor Corporation
FDMA1025P Rev.B4
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMA1025P
Dual P-Channel PowerTrench
–20V, –3.1A, 155m
Features
V
V
I
P
T
R
R
R
R
D
J
DS
GS
D
Max r
Max r
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
RoHS Compliant
Free from halogenated compounds and antimony
oxides
, T
JA
JA
JA
JA
Symbol
Device Marking
STG
DS(on)
DS(on)
025
= 155m at V
= 220m at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation for Single Operation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance Single Operation, Junction to Ambient
Thermal Resistance Single Operation, Junction to Ambient
Thermal Resistance Dual Operation, Junction to Ambient
Thermal Resistance Dual Operation, Junction to Ambient
GS
GS
MicroFET 2X2
FDMA1025P
= –4.5V, I
= –2.5V, I
-Pulsed
Device
D
D
= –3.1A
= –2.3A
T
A
= 25°C unless otherwise noted
D1
D1
Parameter
S1
PIN 1
MicroFET 2X2
G2
Package
G1
D2
S2
1
D2
®
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra -
portable applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum conduction
losses. When connected in the typical common source
configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and well suited to linear mode
applications.
Application
DC - DC Conversion
MOSFET
Reel Size
7’’
(Note 1c)
(Note 1d)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
S1
G1
D2
1
3
2
1
2
3
Tape Width
8mm
–55 to +150
Ratings
–3.1
173
–20
±12
151
1.4
0.7
86
69
–6
www.fairchildsemi.com
3000 units
May 20
Quantity
6
5
4
6
5
4
Units
°C/W
°C
W
G2
D1
S2
V
V
A
tm

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FDMA1025P Summary of contents

Page 1

... Thermal Resistance Dual Operation, Junction to Ambient JA Package Marking and Ordering Information Device Marking Device 025 FDMA1025P ©2010 Fairchild Semiconductor Corporation FDMA1025P Rev.B4 ® MOSFET General Description = –3.1A This device is designed specifically as a single package solution D for the battery charge switch in cellular handset and other ultra - = – ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics I Maximum Continuous Source-Drain Diode Forward S V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr FDMA1025P Rev. 25°C unless otherwise noted J Test Conditions = –250 –250 A, referenced to 25° –16V, V ...

Page 3

... Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0 FDMA1025P Rev.B4 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R pad copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. pad copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. ...

Page 4

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 6 PULSE DURATION = DUTY CYCLE = 0.5%MAX 150 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMA1025P Rev. 25°C unless otherwise noted J = -4. -1.8V GS PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 100 125 150 ( 0.001 - ...

Page 5

... THIS AREA IS LIMITED BY r DS(on) 0.01 0 DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 - FDMA1025P Rev. 25°C unless otherwise noted -10V -12V 100us 1ms 10ms 100ms 1s 10s ...

Page 6

... Dimensional Outline and Pad Layout FDMA1025P Rev.B4 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMA1025P Rev. B4 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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