FDMA1027P Fairchild Semiconductor, FDMA1027P Datasheet

MOSFET P-CH 20V DUAL MICROFET

FDMA1027P

Manufacturer Part Number
FDMA1027P
Description
MOSFET P-CH 20V DUAL MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA1027P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
435pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA1027PTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA1027P
Manufacturer:
Fairchild Semiconductor
Quantity:
312 000
Part Number:
FDMA1027P
Manufacturer:
OMRON
Quantity:
475
Part Number:
FDMA1027P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMA1027P
Quantity:
200
©2010 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMA1027P
Dual P-Channel PowerTrench
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum conduction losses.
connected in the typical common source configuration,
bi-directional current flow is possible.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
V
V
I
P
T
R
R
R
R
D
J
DSS
GSS
D
TJA
TJA
TJA
TJA
Symbol
, T
Device Marking
STG
027
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current -Continuous
Power dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance for Single Operation, Junction-to-Ambient
Thermal Resistance for Single Operation, Junction-to-Ambient
Thermal Resistance for Dual Operation, Junction-to-Ambient
Thermal Resistance for Dual Operation, Junction-to-Ambient
MicroFET 2X2
-Pulsed
FDMA1027P
Device
PIN1
Parameter
T
A
D1
= 25°C unless otherwise noted
D1
S1
When
®
G2
Reel Size
MOSFET
G1 D2
7"
D2
S2
Features
„ -3.0 A, -20V. R
„ Low Profile - 0.8 mm maximun - in the new package
„ RoHS Compliant
1
MicroFET 2x2 mm
Free from halogenated compounds and antimony
oxides
Tape Width
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1c)
(Note 1d)
(Note 1b)
(Note 1a)
(Note 1d)
(Note 1c)
8mm
G1
S1
D2
R
R
DS(ON)
DS(ON)
DS(ON)
2
3
1
= 160 m: @ V
= 240 m: @ V
= 120 m: @ V
-55 to +150
Ratings
-3.0
173
-20
1.4
0.7
1.8
0.8
151
r8
-6
86
69
Quantity
3000 units
GS
GS
GS
May 2010
FDMA1027P Rev.D5
6
5
4
= -2.5 V
= -1.8 V
= -4.5 V
D1
G2
S2
Units
o
C/W
o
W
V
V
A
C

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FDMA1027P Summary of contents

Page 1

... Reel Size Tape Width 7" 8mm 1 May 2010 = 120 -4.5 V DS(ON 160 -2.5 V DS(ON 240 -1.8 V DS(ON Ratings Units - -3 1.4 0.7 W 1.8 0.8 o -55 to +150 C 86 173 o C/W 69 151 Quantity 3000 units FDMA1027P Rev.D5 ...

Page 2

... -4.5V -3. 125° -4.5V - -5V -3. -10V 0V 1.0MHz V = -10V - -4.5V GEN V = -10V -3.0A -4. 0V -1.1 A (Note -3.0A, dI /dt=100A/ Min Typ Max Units - -12 - mV/° r100 - - nA -0.4 -0.7 -1 mV/° 120 - 120 160 m: - 172 240 - 118 160 - 435 - -0.8 -1 FDMA1027P Rev.D5 ...

Page 3

... A 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material 173 C/W when mounted on a minimum pad copper guaranteed by design while R is TJC TJA 151 C/W when c) 69 C/W when mounted on a mounted minimum pad pad copper. oz copper. FDMA1027P Rev.D5 ...

Page 4

... Body Diode Forward Voltage Variation with Source Current and Temperature 4 = -1.5V -2.0V -2.5V -3.0V -3. DRAIN CURRENT (A) D On-Resistance Variation with I = -1. 125 GATE TO SOURCE VOLTAGE (V) GS On-Resistance Variation with Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDMA1027P Rev. D5 -4. 1.2 ...

Page 5

... Transient thermal response will change depending on the circuit board design. 700 600 500 -15V 400 -10V 300 200 100 C rss Figure 8. 100us 1ms 10ms 10 100 Figure 10. Single Pulse Maximum Power 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS Capacitance Characteristics Dissipation FDMA1027P Rev ...

Page 6

... Dimensional Outline and Pad Layout 6 FDMA1027P Rev. D5 ...

Page 7

... TinyBoost™ TinyBuck™ TinyCalc™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Definition FDMA1027P Rev. D5 ®* ® Rev. I48 ...

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