NDS9953A Fairchild Semiconductor, NDS9953A Datasheet - Page 6

• Manufacturer Part Number: NDS9953A
• Description: MOSFET 2P-CH 30V 2.9A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9953A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9953ATR

Typical Thermal Characteristics
Figure 12. SO-8 Dual Package Maximum
2.5
1.5
0.5
0.03
0.01
0.3
0.1
2
1
3 0
1 0
3
1
0.005
0.002
0.001
0
0.1
0.05
0.02
0.01
1c
Figure 14. Maximum Safe Operating Area.
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
1 b
0.5
0.2
0.1
0.0001
1
R
SINGLE PULSE
0.2
J A
V
T
GS
= See Note 1c
A
0.2
2oz COPPER MOUNTING PAD AREA (in
= 25°C
= -10V
- V
D = 0.5
0.5
DS
0.2
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
0.001
0.02
Figure 15. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
1
0.4
0.01
Total Power for Dual Operation
Single Pulse
depending on the circuit board design.
2
1a
0.6
5
Power for Single Operation
0.01
4.5"x5" FR-4 Board
T
Still Air
A
1 0
= 2 5 C
0.8
2
o
)
3 0
5 0
1
t , TIME (sec)
0.1
1
5
4
3
2
1
Figure 13. Maximum Steady-State Drain
0
1c
1 b
Current versus Copper Mounting Pad
Area.
1
.
0.1
2oz COPPER MOUNTING PAD AREA (in
0.2
P(pk)
T - T
Duty Cycle, D = t
1 0
R
J
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
0.3
= See Note 1c
4.5"x5" FR-4 Board
T
Still Air
V
JA
1
A
G S
/ t
= 2 5 C
= - 1 0 V
JA
(t)
100
2
2
0.4
o
)
300
NDS9953A.SAM
1a
0.5