FDS6875 Fairchild Semiconductor, FDS6875 Datasheet

FDS6875

Manufacturer Part Number

FDS6875

Description

MOSFET P-CH DUAL 20V 6A 8SOIC

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDS6875.pdf (5 pages)

Specifications of FDS6875

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

30 mOhm @ 6A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

31nC @ 5V

Input Capacitance (ciss) @ Vds

2250pF @ 10V

Power - Max

900mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Dual Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.03 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

22 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

6 A

Power Dissipation

2000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

Drain Source Voltage Vds

20V

On Resistance Rds(on)

30mohm

Rds(on) Test Voltage Vgs

-4.5V

Threshold Voltage Vgs Typ

-800mV

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDS6875TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDS6875

Manufacturer:

FSC

Quantity:

400

Company:

BOSTOCK HK LIMITED

Part Number:

FDS6875

Manufacturer:

FAIRCHILD

Quantity:

8 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDS6875

Manufacturer:

NS/国半

Quantity:

20 000

Company:

H&T Electronics

Part Number:

FDS6875

Quantity:

4 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDS6875-NL

Manufacturer:

FAIRCHILD

Quantity:

50 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDS6875-NL

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Current page: 1 of 5
Download datasheet (63Kb)

Absolute Maximum Ratings

Symbol

THERMAL CHARACTERISTICS

Dual P-Channel 2.5V Specified PowerTrench

These

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored to

minimize the on-state resistance and yet maintain low gate

charge for superior switching performance.

These devices are well suited for portable electronics

applications: load switching and power management,

battery charging and protection circuits.

FDS6875

General Description

DSS

GSS

STG

SOT-23

P-Channel

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

SO-8

SuperSOT

- Pulsed

2.5V specified

pin 1

-6

= 25

MOSFETs are

SuperSOT

C unless otherwise noted

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

(Note 1a)

-8

Features

SO-8

-6 A, -20 V. R

Low gate charge (23nC typical).

High performance trench technology for extremely low

High power and current handling capability.

DS(ON)

MOSFET

DS(ON)

-55 to 150

FDS6875

= 0.040

November 1998

-20

1.6

0.9

±8

-6

= 0.030

SOT-223

@ V

= -2.5 V.

= -4.5 V,

SOIC-16

FDS6875 Rev.C

Units

°C/W

°C

Related parts for FDS6875

FDS6875 Summary of contents

Page 1

... High power and current handling capability. TM SO-8 SuperSOT - unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) November 1998 = 0.030 @ V = -4.5 V, DS(ON 0.040 @ V = -2.5 V. DS(ON SOIC-16 SOT-223 FDS6875 -20 ±8 -6 -20 2 1.6 1 0.9 -55 to 150 78 40 Units °C °C/W °C/W FDS6875 Rev.C ...

Page 2

... 55°C -10 J 100 -100 -0.4 -0.8 -1 2.8 0.024 0.03 T =125°C 0.033 0.048 J 0.032 0.04 -20 22 2250 500 200 135 3.9 5.5 -1.3 -0.7 -1.2 is guaranteed 135 C 0.003 in 2 pad of 2oz copper. FDS6875 Rev.C Units V o mV/ C µA µ mV ...

Page 3

... V -4. DRAIN CURRENT (A) D Dain Current and Gate Voltage -3. 125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125° 25° C -55° C 0.3 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDS6875 Rev 1.2 ...

Page 4

... Transient thermal response will change depending on the circuit board design. C iss C oss C rss = 0 V 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135°C 25°C A 0.1 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 300 20 300 FDS6875 Rev.C ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

Related keywords

fds6898a
fds6898
fds6898az
fds6894a
fds6892a
fds6892
fds6890a
fds6890
fds6875
FDS6875 datasheet
FDS6875 data sheet
FDS6875 pdf datasheet
FDS6875 component
FDS6875 part
FDS6875 distributor
FDS6875 RoHS
FDS6875 datasheet download