FDS3890 Fairchild Semiconductor, FDS3890 Datasheet
FDS3890
Manufacturer Part Number
FDS3890
Description
MOSFET N-CH DUAL 80V 4.7A SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS3890.pdf
(5 pages)
Specifications of FDS3890
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
44 mOhm @ 4.7A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 40V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.044 Ohms
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS3890
FDS3890TR
FDS3890TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS3890
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS3890AZ_NL
Manufacturer:
FAIRCHILD
Quantity:
5 000
FDS3890
80V N-Channel Dual PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
DS(ON)
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
N-Channel
specifications. The result is a MOSFET that is
FDS3890
D2
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D2
MOSFET
D1
D1
S2
– Continuous
– Pulsed
has
FDS3890
Device
G2
Parameter
been
S1
G1
designed
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
Features
4.7 A, 80 V.
Fast switching speed
High performance trench technology for extremely
low R
High power and current handling capability
DS(ON)
5
6
7
8
Tape width
R
R
DS(ON)
DS(ON)
–55 to +175
12mm
Q1
Q2
Ratings
4.7
1.6
1.0
0.9
80
20
78
40
2
= 44 m
= 50 m
20
@ V
@ V
February 2001
4
3
2
1
GS
GS
= 10 V
= 6 V
2500 units
FDS3890 Rev B(W)
Quantity
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
FDS3890 Summary of contents
Page 1
... High power and current handling capability =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ February 2001 DS(ON DS(ON Ratings Units 4 1.6 1.0 0.9 –55 to +175 C C/W 78 C/W 40 Tape width Quantity 12mm 2500 units FDS3890 Rev B(W) ...
Page 2
... A (Note determined by the user's board design 125°C/W when 2 mounted on a .04 in pad copper Min Typ Max Units 175 100 nA –100 –6 mV 1180 pF 171 4.5 nC 5.8 nC 1.3 A 0.74 1 135°C/W when mounted on a minimum pad. FDS3890 Rev B(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4.0V GS 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 2 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS3890 Rev B( 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 135°C Duty Cycle 100 1000 FDS3890 Rev B(W) ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...