BSD235N L6327 Infineon Technologies, BSD235N L6327 Datasheet - Page 6

• Manufacturer Part Number: BSD235N L6327
• Description: MOSFET N-CH DUAL 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235N L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 63pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235N L6327; BSD235N L6327INTR; SP000442458

Rev 2.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
600
500
400
300
200
100
DS
=f(T
2
1
0
0
); V
-60
0
j
); I
GS
D
=0 V; f =1 MHz; T
=0.95 A; V
-20
5
20
98 %
GS
V
T
DS
=4.5 V
j
10
[°C]
[V]
60
j
Coss
Ciss
=25°C
Crss
typ
100
15
140
page 6
20
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
1.6
1.2
0.8
0.4
10
10
=f(T
SD
0
-1
-2
-3
1
0
-60
)
0
j
); V
D
j
150 °C
DS
-20
=V
0.4
25 °C
GS
; I
20
D
=1.6 µA
2 %
V
T
SD
j
typ
0.8
[°C]
25 °C, 98%
98 %
[V]
60
150 °C, 98%
100
1.2
BSD235N
140
2011-07-14
1.6