BSO612CV G Infineon Technologies, BSO612CV G Datasheet

BSO612CV G

Manufacturer Part Number

BSO612CV G

Description

MOSFET N/P-CH 60V 2A 8-SOIC

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.BSO612CV_G.pdf (13 pages)

Specifications of BSO612CV G

Fet Type

N and P-Channel

Fet Feature

Standard

Rds On (max) @ Id, Vgs

120 mOhm @ 3A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

3A, 2A

Vgs(th) (max) @ Id

4V @ 20µA

Gate Charge (qg) @ Vgs

15.5nC @ 10V

Input Capacitance (ciss) @ Vds

340pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Dual Dual Drain

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

120 m Ohms

Drain-source Breakdown Voltage

+ 60 V / - 60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

3 A, - 2 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Package

SO-8

Vds (max)

60.0 V-60.0 V

Id (max)

3.0 A-2.0 A

Idpuls (max)

12.0 A-8.0 A

Rds (on) (max) (@10v)

120.0 mOhm300.0 mOhm

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BSO612CV G
BSO612CVGINTR
BSO612CVGT
BSO612CVGXT
BSO612CVT
BSO612CVXTINTR
BSO612CVXTINTR
SP000216307

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Features

SIPMOS

Type

BSO 612 CV

Maximum Ratings,at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by T

Reverse diode d v /d t, T

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Enhancement mode

Dual N- and P -Channel

Avalanche rated

Pb-free lead plating;RoHS compliant

= 3 A, V

= -2 A, V

= 3 A, V

= -2 A, V

= 25 °C

= 70 °C

= 25 °C

Small-Signal-Transistor

= 48 V, d i /d t = 200 A/µs

= 25 V, R

= -48 V, d i /d t = -200 A/µs

= -25 V, R

Package

PG-DSO-8

jmax

= 25 °C, unless otherwise specified

= 25

= 150 °C

= 25

Product Summary

Drain source voltage

Drain-Source on-state

resistance

Continuous drain current

Rev. 2.0

Marking

612CV

jmax

Page 1

Symbol

d v /d t

D puls

tot

j ,

stg

DS(on)

±20

2.4

0.2

-55...+150

55/150/56

0.12

Value

BSO 612 CV G

-1.6

±20

0.2

-2

-8

2006-08-25

-60

0.3

-2

Unit

kV/µs

°C

Related parts for BSO612CV G

BSO612CV G Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features · Dual N- and P -Channel · Enhancement mode · Avalanche rated · Pb-free lead plating;RoHS compliant Type Package BSO 612 CV PG-DSO-8 Maximum Ratings, °C, unless otherwise specified j Parameter Continuous drain current ...

Page 2

Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point ( Pin 4) SMD version, device on PCB: @ min. footprint sec. £ cooling area ; t @ min. footprint ...

Page 3

Electrical Characteristics , at T Parameter Characteristics Transconductance ³ DS(on)max ³ DS(on)max Input capacitance ...

Page 4

Electrical Characteristics Parameter Characteristics Gate to source charge - Gate to drain charge ...

Page 5

Power Dissipation (N-Ch tot A BSO 612 CV 2.2 W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Drain current (N-Ch ...

Page 6

Safe operating area (N-Ch parameter : °C A BSO 612 ...

Page 7

Typ. output characteristics (N-Ch parameter µs p BSO 612 CV 7 2.00W tot 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 ...

Page 8

Typ. transfer characteristics (N-Ch.) parameter µ ³ ...

Page 9

Drain-source on-resistance (N-Ch DS(on) j parameter : BSO 612 CV 0.34 W 0.28 0.24 0.20 0.16 98% 0.12 typ 0.08 0.04 0.00 -60 - ...

Page 10

Typ. capacitances (N-Ch parameter MHz Forward characteristics of reverse diode (N-Ch.) ...

Page 11

Avalanche Energy parameter 105 ...

Page 12

Drain-source breakdown voltage (N-Ch.) (BR)DSS j BSO 612 -60 - Rev. 2.0 Drain-source breakdown voltage V (BR)DSS -72 V -68 -66 ...

Page 13

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain sustain and/or protect human life ...

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