FDG6303N Fairchild Semiconductor, FDG6303N Datasheet - Page 4

• Manufacturer Part Number: FDG6303N
• Description: IC FET DGTL N-CHAN DUAL SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6303N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.45 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: - 0.5 V to 8 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6303NTR

Typical Electrical Characteristics (continued)
0.05
0.02
0.01
Figure 7. Gate Charge Characteristics.
0.5
0.2
0.1
Figure 9. Maximum Safe Operating Area.
5
4
3
2
1
0
3
1
0
0.1
I = 0.5A
D
0.005
0.002
0.05
0.02
0.01
0.5
0.2
0.1
R
SINGLE PULSE
0.0001
1
JA
V
T = 25°C
0.4
GS
A
= 415 °C/W
D = 0.5
0.2
= 4.5V
V
0.1
DS
0.05
0.02
, DRAI N-SOURCE VOLTAGE (V)
Q
g
0.01
, GATE CHARGE (nC)
0.8
1
Single Pulse
Figure 11. Transient Thermal Response Curve.
0.001
2
1.2
V
5
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
DS
= 5V
10
1.6
0.01
10V
15V
25
2
40
t , TIME (sec)
1
0.1
50
40
30
20
10
0.0001
0
200
70
30
10
3
0.1
Figure 10. Single Pulse Maximum Power
Figure 8. Capacitance Characteristics.
f = 1 MHz
V
0.001
GS
1
= 0V
0.3
V
DS
0.01
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
Dissipation.
P(pk)
T - T
Duty Cycle, D = t / t
J
1
R
10
0.1
t
R
1
A
JA
t
= P * R
JA
2
(t) = r(t) * R
2
=415 °C/W
1
JA
1
SINGLE PULSE
R
(t)
2
5
JA
T = 25°C
JA
A
=415°C/W
100
10
10
FDG6303N Rev.F
C iss
C oss
200
C rss
200
25