BSO150N03 Infineon Technologies, BSO150N03 Datasheet - Page 4

• Manufacturer Part Number: BSO150N03
• Description: MOSFET N-CHAN 30V 7.6A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO150N03

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 9.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 2V @ 25µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 1890pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO150N03; BSO150N03INTR; BSO150N03XT; SP000077687

Rev. 1.6
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
10
10
=f(T
10
10
10
2.5
1.5
0.5
-1
-2
2
1
0
10
2
1
0
DS
100
0.01
10
0.1
1
0.1
A
-1
0
); T
); t
limited by on-state
resistance
p
A
p
≤10 s
=25 °C
40
1)
10
; D =0
1
0
V
T
DS
A
80
[°C]
[V]
10 ms
100 µs
10
1 ms
10
DC
1
10 s
120
10 µs
160
page 4
10
100
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJS
=f(T
10
10
10
10
=f(t
-1
10
2
1
0
10
A
8
6
4
2
0
100
10
0.1
0.00001
); V
1
0.1
-5
p
0.5
0.2
0.02
0.01
0
0.05
)
single pulse
GS
≥10 V; t
10
0.0001
-4
p
/T
40
10
p
0.001
≤10 s
-3
T
t
A
10
p
80
[°C]
0.01
[s]
-2
10
0.1
-1
120
BSO150N03
10
1
0
2008-01-16
160
10
10
1