FDS8958B Fairchild Semiconductor, FDS8958B Datasheet
FDS8958B
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FDS8958B Summary of contents
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... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDS8958B FDS8958B ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B ® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's = 6.4 A advanced PowerTrench ...
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... Fall Time f Q Total Gate Charge g(TOT) Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2008 Fairchild Semiconductor Corporation FDS8958B Rev °C unless otherwise noted J Test Conditions = 250 µ -250 µ 250 µA, referenced to 25 °C ...
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... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. UIL condition: Starting ° mH Starting ° mH ©2008 Fairchild Semiconductor Corporation FDS8958B Rev °C unless otherwise noted J Test Conditions 1 ...
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... J Figure 3. Normalized On Resistance vs Junction Temperature 30 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS8958B Rev °C unless otherwise noted J 3 2 2 1.0 µ s 0.5 2.0 2.5 3 100 125 150 ...
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... Gate Charge Characteristics 125 0.001 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 500 100 Figure 11. Single Pulse Maximum Power Dissipation ©2008 Fairchild Semiconductor Corporation FDS8958B Rev °C unless otherwise noted J 1000 100 100 0.1 0. 100 PULSE WIDTH (sec MHz V ...
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... Typical Characteristics (Q1 N-Channel DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 12. ©2008 Fairchild Semiconductor Corporation FDS8958B Rev °C unless otherwise noted J SINGLE PULSE 135 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: ...
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... J Figure 17. Normalized On-Resistance vs Junction Temperature 30 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX - GATE TO SOURCE VOLTAGE (V) GS Figure 19. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS8958B Rev °C unless otherwise noted J 4 4.0 µ s 3 2.5 2 1 0.5 2.0 2.5 3 ...
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... Switching Capability 100 THIS AREA IS LIMITED BY r DS(on SINGLE PULSE T = MAX RATED 0 135 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 25. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDS8958B Rev °C unless otherwise noted J 2000 1000 100 200 100 ...
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... Typical Characteristics (Q2 P-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.002 - Figure 27. Junction-to-Ambient Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDS8958B Rev °C unless otherwise noted J SINGLE PULSE 135 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...