FDMC6890NZ Fairchild Semiconductor, FDMC6890NZ Datasheet - Page 5

• Manufacturer Part Number: FDMC6890NZ
• Description: MOSFET N-CH DUAL 20V 4A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC6890NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 68 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 3.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 1.92W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC6890NZTR

FDMC6890NZ Rev.C
Typical Characteristics (Q1 N-Channel)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
Figure 7.
1
0.01
100
0.5
10
0.0
10
1
Figure 9.
-4
0.5
Switching Capability
Gate Charge Characteristics
t
T
AV
J
Unclamped Inductive
, TIME IN AVALANCHE(ms)
= 125
Q
0.1
g
1.0
, GATE CHARGE(nC)
10
o
C
-3
V
GS
V
T
Figure 11.
DD
J
SINGLE PULSE
= 10V
= 25
1.5
= 8V
o
C
V
DD
1
2.0
= 12V
10
-2
V
Single Pulse Maximum Power Dissipation
DD
= 10V
2.5
10
3.0
10
-1
t, PULSE WIDTH (s)
T
J
= 25°C unless otherwise noted
5
0.01
10
0.1
400
100
20
10
20
1
0.1
0
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
Figure 8.
f = 1MHz
V
Figure 10.
GS
V
= 0V
DS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
to Source Voltage
, DRAIN to SOURCE VOLTAGE (V)
DS(on)
Operating Area
10
Capacitance vs Drain
1
Forward Bias Safe
1
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
SINGLE PULSE
T J = MAX RATED
T A = 25
1
25
O
C
o
C DERATE PEAK
150 T A
----------------------- -
10
125
C
2
C
–
rss
C
oss
iss
T
10
A
= 25
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o
C
10
10ms
1ms
100ms
1s
10s
100us
DC
10
3
60
20