BSO211P Infineon Technologies, BSO211P Datasheet - Page 5
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BSO211P
Manufacturer Part Number
BSO211P
Description
MOSFET DUAL P-CH 20V 4.7A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSO211P.pdf
(8 pages)
Specifications of BSO211P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
67 mOhm @ 4.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
1.2V @ 25µA
Gate Charge (qg) @ Vgs
23.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
920pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.067 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO211PINTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSO211P
Manufacturer:
INFINEON
Quantity:
5 510
Part Number:
BSO211P
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO211P H
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
Rev.1.2
= f ( V
= f (V
A
A
40
30
25
20
15
10
20
16
14
12
10
5
0
8
6
4
2
0
0
0
DS
GS
1
); T
); |V
0.5
p
p
= 80 µs
2
= 80 µs
j
=25°C
DS
3
|≥ 2 x |I
1
Vgs = -4.5V
Vgs = -5V
Vgs = -6V
Vgs = -7V
4
Vgs = -4V
1.5
5
D
| x R
6
2
Vgs = -3.5V
Vgs = -2.5V
Vgs = -3V
7
DS(on)max
8
V
- V
- V
V
DS
GS
10
3
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: t p = 80 µs
fs
DS(on)
= f(I
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Ω
0.1
S
20
16
14
12
10
0
8
6
4
2
0
0
0
D
= f (I
); T
2
Vgs = -2.5V
5
j
=25°C
D
GS
4
)
10
6
Vgs = -3V
15
8
10
20
12
25
14
Vgs= - 3.5V
Vgs= - 4V
Vgs = - 4.5V
Vgs = - 5V
Vgs= - 6V
Vgs = - 7V
2002-01-22
30
BSO211P
16
A
A
- I
- I
D
D
20
40