FDS9933BZ Fairchild Semiconductor, FDS9933BZ Datasheet

MOSFET P-CH DUAL 20V 4.9A 8-SOIC

FDS9933BZ

Manufacturer Part Number
FDS9933BZ
Description
MOSFET P-CH DUAL 20V 4.9A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS9933BZ

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 4.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
985pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.046 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.9 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS9933BZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS9933BZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS9933BZ-NL
Manufacturer:
FAIRCHILD
Quantity:
12 647
Part Number:
FDS9933BZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
FDS9933BZ
Dual P-Channel 2.5V Specified PowerTrench
-20V, -4.9A, 46mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
θJC
θJA
Max r
Max r
Low gate charge (11nC typical).
High performance trench technology for extremely low r
HBM ESD protection level >3kV (Note 3).
RoHS Compliant
, T
Symbol
Device Marking
STG
FDS9933BZ
DS(on)
DS(on)
= 46mΩ at V
= 69mΩ at V
D1
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Pin 1
D1
D2
GS
GS
D2
SO-8
= -4.5V, I
= -2.5V, I
FDS9933BZ
-Pulsed
Device
S1
D
D
G1
= -4.9A
= -4.0A
S2
T
A
= 25°C unless otherwise noted
G2
Parameter
DS(on).
Package
SO-8
1
T
General Description
These P-Channel 2.5V specified MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
A
= 25°C
Battery Charging
Load Switching
D2
D2
D1
D1
Reel Size
330mm
7
6
8
5
®
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
MOSFET
Q1
Q2
Q1
Q2
Q2
Q2
Q1
Q1
Tape Width
12mm
-55 to +150
Ratings
-4.9
±12
-20
-30
1.6
0.9
40
78
1
4
3
2
G2
S2
G1
S1
www.fairchildsemi.com
March 2008
2500 units
Quantity
®
process
Units
°C/W
°C
W
V
V
A
tm

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FDS9933BZ Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDS9933BZ FDS9933BZ ©2008 Fairchild Semiconductor Corporation FDS9933BZ Rev.C General Description = -4.9A These P-Channel 2.5V specified MOSFETs are produced using D Fairchild Semiconductor’s advanced PowerTrench = -4.0A D that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2008 Fairchild Semiconductor Corporation FDS9933BZ Rev 25°C unless otherwise noted J Test Conditions I = -250µ ...

Page 3

... Junction Temperature 30 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX -5. 150 - 0.5 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS9933BZ Rev 25°C unless otherwise noted - -3. -2. -2V µ 250 200 150 100 100 125 150 100 10 0.1 o ...

Page 4

... Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 135 C/W θ 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDS9933BZ Rev 25°C unless otherwise noted J 3000 1000 V = -10V -15V DD 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE R θ 0. ©2008 Fairchild Semiconductor Corporation FDS9933BZ Rev 25°C unless otherwise noted 135 C RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θJA ...

Page 6

... Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2008 Fairchild Semiconductor Corporation FDS9933BZ Rev.C FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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