FDC6320C Fairchild Semiconductor, FDC6320C Datasheet - Page 8

• Manufacturer Part Number: FDC6320C
• Description: MOSFET N/P-CH DUAL 25V SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6320C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA, 120mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 0.2 S, 0.135 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V @ N Channel or - 8 V @ P Channel
• Continuous Drain Current: 0.22 A @ N Channel or 0.12 A @ P Channel
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NDS356AP
SI3442DV_F073
SI3456DV_NL
SI3457DV_F095
NDS356AP_NB8L005A
SI3443DV
SI3457DV
SI3457DV_NL
NDS356AP_NL
SI3443DV_F095
SI3457DV_F073
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