FDG6332C Fairchild Semiconductor, FDG6332C Datasheet - Page 3

• Manufacturer Part Number: FDG6332C
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG6332C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA, 600mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 113pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 2.8 S, 1.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A @ N Channel or 0.6 A @ P Channel
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 700mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6332C

Qualification Stress Test and Sample Size Detail
Device #1 2N7002
Package:
006
#Leads:
Precondition Description:
Pg. 3