FDMA3023PZ Fairchild Semiconductor, FDMA3023PZ Datasheet

MOSFET P-CH DUAL 30V MICROFET6

FDMA3023PZ

Manufacturer Part Number
FDMA3023PZ
Description
MOSFET P-CH DUAL 30V MICROFET6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA3023PZ

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
530pF @ 15V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.9 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA3023PZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMA3023PZ
Quantity:
6 000
©2010 Fairchild Semiconductor Corporation
FDMA3023PZ Rev.B2
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMA3023PZ
Dual P-Channel PowerTrench
-30 V, -2.9 A, 90 mΩ
Features
V
V
I
P
T
R
R
R
R
D
J
DS
GS
D
θJA
θJA
θJA
θJA
Max r
Max r
Max r
Max r
Low profile - 0.8 mm maximu m - in the new package MicroFET
2x2 mm
HBM ESD protection level > 2kV (Note 3)
RoHS Compliant
Free from halogenated compounds and ant imony
oxides
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
323
= 90 mΩ at V
= 130 mΩ at V
= 170 mΩ at V
= 240 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
MicroFET 2x2
GS
GS
GS
GS
FDMA3023PZ
= -4.5 V, I
-Pulsed
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
Device
PIN 1
D
D
D
D
= -2.9 A
= -2.6 A
= -1.7 A
= -1.0 A
T
D1
A
S1
= 25 °C unless otherwise noted
D1
Parameter
G2
G1
MicroFET 2X2
®
S2
D2
Package
MOSFET
D2
1
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connec ted in the typical
source configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
Reel Size
G1
S1
D2
7 ’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
1
1
1
1
1
1
1
2
2
2
2
2
2
2
3
3
3
3
3
3
3
Tape Width
8 mm
-55 to +150
Ratings
-2.9
173
151
-30
1.4
0.7
86
±8
69
-6
6
5
4
6
6
6
6
6
6
5
5
5
5
5
5
4
4
4
4
4
4
www.fairchildsemi.com
3000 units
D1
G2
S2
Quantity
May 2010
common
Units
°C/W
°C
W
V
V
A
tm

Related parts for FDMA3023PZ

FDMA3023PZ Summary of contents

Page 1

... Thermal Resistance for Dual Operation, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 323 FDMA3023PZ ©2010 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B2 ® MOSFET General Description This device is designed specifically as a single package solution = -2 for the battery charge switch in cellular handset and other = -2 ...

Page 2

... Drain-Source Diode Characteristics I Maximum Continuous Drain-Source Diode Forward Current S V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2010 Fairchild Semiconductor Corporation FDMA3023PZ Rev. °C unless otherwise noted J Test Conditions I = -250 µ -250 µA, referenced to 25 ° ...

Page 3

... Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material pad copper, 1.5 " ...

Page 4

... PULSE DURATION = 80 s µ DUTY CYCLE = 0.5% MAX 125 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMA3023PZ Rev. °C unless otherwise noted - PULSE DURATION = 80 s µ DUTY CYCLE = 0.5% MAX 1.5 2 100 125 150 0. - 0.001 1.5 2 ...

Page 5

... 125 GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage vs Gate to Source Voltage 200 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDMA3023PZ Rev. °C unless otherwise noted J 1000 Figure 10 PULSE WIDTH (sec) 5 100 MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 8 ...

Page 6

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.005 - Figure 12. ©2010 Fairchild Semiconductor Corporation FDMA3023PZ Rev. °C unless otherwise noted J SINGLE PULSE 173 C/W JA θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 7

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B2 7 www.fairchildsemi.com ...

Page 8

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMA3023PZ Rev.B2 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

Related keywords