FDC6318P Fairchild Semiconductor, FDC6318P Datasheet - Page 2

• Manufacturer Part Number: FDC6318P
• Description: MOSFET P-CH DUAL 12V SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6318P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 455pF @ 6V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: 700mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
GS(th)
SD
θJA
DS(on)
iss
oss
rss
∆T
∆T
g
gs
gd
GS(th)
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
θJC
is guaranteed by design while R
a) 130 °C/W when
mounted on a 0.125
in
copper.
2
Parameter
pad of 2 oz.
(Note 2)
(Note 2)
θCA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
b) 140°C/W when mounted
= –250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
= 25°C unless otherwise noted
= –4.5 V, I
= –10 V,
= V
= –5 V,
= –6 V,
= –6 V,
= 0 V,
= 8 V,
= –8 V,
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –4.5 V, V
= –6 V,
= –4.5 V, R
= –4.5 V
= 0 V,
on a .004 in
copper
Test Conditions
GS
,
2
D
pad of 2 oz
I
V
V
V
I
= –2.5A, T
I
V
I
I
I
D
D
D
D
D
D
D
D
S
GS
DS
DS
DS
GEN
GS
= –0.8 A
= –250 µA
= –250 µA
= –2.5 A
= –2 A
= –1.6 A
= –2.5 A
= –1 A,
= –2.5 A,
= 0 V
= 0 V
= 0 V
= –5 V
= 0 V,
= 6 Ω
J
=125°C
(Note 2)
Min
–0.4
–12
–6
c) 180°C/W when mounted on a
minimum pad.
Typ Max Units
–2.9
–0.7
–0.7
135
455
194
134
2.3
5.4
1.1
1.3
69
93
85
14
21
17
8
9
–100
–1.5
–0.8
–1.2
100
125
200
120
–1
90
18
25
34
31
8
FDC6318P Rev D (W)
mV/°C
mV/°C
mΩ
nC
nC
nC
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V