FDS8962C Fairchild Semiconductor, FDS8962C Datasheet - Page 2

• Manufacturer Part Number: FDS8962C
• Description: MOSFET N/P-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8962C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms / 0.052 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A, - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8962C

FDS8962C Rev. A1
Electrical Characteristics
Off Characteristics
BV
∆ BV
I
I
I
On Characteristics (Note 2)
V
∆ V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
Symbol
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
FS
GS(th)
∆ T
∆ T
DS(on)
iss
oss
rss
G
g
gs
gd
GS(th)
DSS
DSS
J
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Parameter
T
A
= 25°C unless otherwise noted
V
V
I
I
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
Q1
V
Q2
V
Q1
V
V
Q2
V
V
Q1
V
Q2
V
V
D
D
D
D
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DD
DD
DS
DS
DS
= 250 µ A, Referenced to 25 ° C
= -250 µA, Referenced to 25 ° C
= 250 µ A, Referenced to 25 ° C
= -250 µA, Referenced to 25 ° C
= 0 V, I
= 0 V, I
= 24 V, V
= -24 V, V
= 20 V, V
= -20 V, V
= V
= V
= 10 V, I
= 10 V, I
= 4.5 V, I
= -10 V, I
= -10 V, I
= -4.5 V, I
= 10 V, V
= -10 V, V
= 5 V, I
= -5 V, I
= 15 V, V
= 15 mV, f = 1.0 MHz
= 15 V, I
= 10V, R
= -15 V, I
= -10V, R
= 15 V, I
= -15 V, I
= -15 V, V
Test Conditions
GS
GS
, I
, I
D
D
D
D
D
D
D
D
D
D
GEN
= 250 µ A
= -250 µ A
GS
D
= 7 A
GS
D
DS
D
D
DS
D
D
GEN
GS
DS
= 250 µ A
= -250 µA
DS
=-5 A
GS
= 7 A
= 7 A, T
= 1 A,
= 7 A, V
= 6 A
= -5 A
= -5 A, T
= -5 A,V
= -1 A,
= -4 A
2
= 0 V
= 0 V
= 5 V
= 0 V, f = 1.0 MHz
= 0 V
= 0 V
= -5 V
= 6 Ω
= 0 V, f = 1.0 MHz
= 6 Ω
J
GS
GS
= 125 ° C
J
= 125 ° C
= 10 V
= -10 V
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
All
All
Min
-30
-20
30
20
-1
1
Typ
10.7
-1.7
-4.5
575
528
145
132
-23
1.9
4.5
2.1
6.0
9.6
1.7
2.2
2.1
1.7
25
21
29
26
42
57
65
25
10
65
70
13
23
14
8
7
5
3
9
Max
-100
100
30
46
44
52
78
80
16
14
10
24
37
25
17
26
13
-1
-3
1
3
6
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Units
mV/ ° C
mV/ ° C
m Ω
µ A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
A
S