This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Reel Size 13’’ March 2006 = 4.5 V DS(ON 2.5 V. DS(ON –4.5 V DS(ON –2.5 V DS(ON Ratings Units –20 V ± 6.5 – – 1.6 1 0.9 –55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS9934C Rev D(W) ...
... A/µ -3 100 A/µ determined by the user's board design 125°C/W when 2 mounted on a .02 in pad copper Type Min Typ Max Units 2 2 –1.3 Q1 0.73 1 –0.8 –1 135°C/W when mounted on a minimum pad. FDS9934C Rev D(W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 3.5V 4.0V 4. DIRAIN CURRENT ( 3.25A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS9934C Rev D( 1.2 ...
... C rss Figure 8. Capacitance Characteristics. 50 100 s 40 1ms 10ms 100 0 0.001 Figure 10. Single Pulse Maximum MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. FDS9934C Rev D(W) 20 100 ...
... T 0.1 0.01 0.001 0.0001 Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. =-2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage. = 125 -55 C 0.4 0.8 1 BODY DIODE FORWARD VOLTAGE (V) SD FDS9934C Rev D( 1.6 ...
... Figure 20. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS9934C Rev D(W) 20 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...