FDD8424H Fairchild Semiconductor, FDD8424H Datasheet - Page 2

• Manufacturer Part Number: FDD8424H
• Description: MOSFET DUAL N/P-CH 40V TO252-4L
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8424H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A, 6.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A @ N Channel or 6.5 A @ P Channel
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: YES
• Module Configuration: Dual
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Fall Time: 6 ns, 3 ns
• Rise Time: 13 ns, 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8424HTR

©2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
iss
oss
rss
g
∆T
∆T
g(TOT)
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25°C unless otherwise noted
Q1
V
V
Q2
V
V
Q1
V
Q2
V
V
V
I
I
V
V
V
V
V
V
V
V
Q1
V
Q2
V
f = 1MHz
I
I
I
I
V
V
V
D
D
D
D
D
D
DD
GS
DD
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
GS
= 250µA, referenced to 25°C
= -250µA, referenced to 25°C
= 250µA, V
= -250µA, V
= 250µA, referenced to 25°C
= -250µA, referenced to 25°C
= 20V, V
= -20V, V
= -10V, I
= 5V, I
= -5V, I
= 20V, I
= 10V, R
= -20V, I
= -10V, R
= 10V, V
= -10V, V
= V
= V
= 10V, I
= 4.5V, I
= 10V, I
= -10V, I
= -4.5V, I
= 32V, V
= -32V, V
= ±20V, V
DS
DS
Test Conditions
, I
, I
D
2
D
D
D
D
D
GS
DD
D
D
D
GEN
D
= 9.0A
D
GS
DD
GEN
= 9.0A,
D
= -6.5A
GS
= 9.0A
= 9.0A, T
= -6.5A,
= 250µA
= -250µA
= -6.5A, T
GS
GS
DS
GS
= 7.0A
= -6.5A
= -5.6A
= 0V, f = 1MHZ
= 20V, I
= 0V, f = 1MHZ
= -20V, I
= 0V
= 6Ω
= 0V
= 0V
= 0V
= 0V
= 6Ω
D
J
J
D
= 125°C
= 9.0A
= 125°C
= -6.5A
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Min
-40
40
-1
1
1000
Typ
-1.6
-5.3
-32
1.7
4.8
750
115
140
34
19
23
29
42
58
62
29
13
1.1
3.3
2.3
3.0
3.2
3.6
75
75
13
17
20
14
17
7
7
3
6
3
±100
±100
Max
1000
1330
155
185
115
115
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-1
24
30
37
54
70
80
-3
1
14
14
24
10
31
36
12
10
20
24
3
mV/°C
mV/°C
Units
mΩ
µA
nA
nA
pF
pF
pF
nC
nC
nC
V
Ω
ns
ns
ns
ns
V
S