FDS9933A Fairchild Semiconductor, FDS9933A Datasheet - Page 3

• Manufacturer Part Number: FDS9933A
• Description: MOSFET P-CH DUAL 20V 3.8A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9933A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 3.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9933A

Typical Characteristics
20
15
10
10
5
0
8
6
4
2
0
0
Figure 1. On-Region Characteristics.
1 .6
1 .4
1 .2
0 .8
0 .6
1
1
Figure 5. Transfer Characteristics.
-50
Figure 3. On-Resistance Variation
V
V = -4.5V
DS
G S
V
= -5V
I = -3. 8A
D
GS
-25
= -4 .5V
1
-V
- V
1.5
GS
withTemperature.
DS
-3. 5V
T , JUNCT ION TEMPERATURE (° C)
, GATE T O SOURCE VOLTAGE (V)
0
J
, D R AI N-S OU R CE VOLTA GE (V)
-3.0V
2
25
T = -55°C
J
-2.5V
2
50
3
-2.0V
75
(continued)
25°C
2.5
125° C
-1.5V
100
4
125
150
3
5
0.25
0.15
0.05
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.0001
0 . 12
0 . 08
0 . 06
0 . 04
0.2
0.1
Figure 6. Body Diode Forward Voltage
0.001
0. 1
0.01
0
0.1
10
1
0
1
Drain Current and Gate Voltage.
0
Variation with Source Current
V
V
GS
GS
Gate-to-Source Voltage.
= 0V
= -2 . 0 V
0.2
-V
- V
4
SD
and Temperature.
2
GS
, BOD Y D I OD E FOR W AR D VOLT AGE (V )
, GATE TO SOURCE VOLTAGE (V)
- I
T = 125 °C
0.4
D
J
-2 . 5 V
, D RA I N C U RR EN T (A)
8
3
0.6
25 °C
T = 1 2 5 ° C
J
-3 . 0 V
-55 °C
1 2
2 5 ° C
0.8
-3 . 5 V
4
1 6
I
D
-4 . 5 V
1
= -2.0 A
FDS9933A Rev. C
1.2
2 0
5