FDS6986AS Fairchild Semiconductor, FDS6986AS Datasheet
FDS6986AS
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FDS6986AS Summary of contents
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... FDS6986AS Dual Notebook Power Supply N-Channel PowerTrench General Description The FDS6986AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two ...
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... Referenced to 25° 7 7 125° 125° 1.0 MHz V = 15mV 1.0 MHz Ω 10V GEN Ω 4.5V GEN mV/° µA Q2 500 ±100 1 1 –3.2 mV/°C Q1 –4 mΩ 550 pF Q1 720 Q2 180 pF Q1 120 Ω Q2 3 FDS6986AS Rev A (X) ...
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... Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. 4. FDS6986AS_NL is a lead free product. FDS6986AS_NL marking will appear on the reel label. (continued 25°C unless otherwise noted A Test Conditions ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V 4.0V 4.5V 5.0V 6. DRAIN CURRENT ( 3.95A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6986AS Rev A (X) 10V 30 10 1.2 ...
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... C rss Figure 8. Capacitance Characteristics. 50 100µs 40 1ms 10ms 100ms 0.001 10 100 Figure 10. Single Pulse Maximum f = 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C/W θ 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. FDS6986AS Rev A (X) 20 100 ...
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... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature 3.0V GS 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 3 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6986AS Rev A ( 1.2 ...
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... Figure 20. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C/W θ 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( θJA θ 135 °C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDS6986AS Rev A (X) 20 100 ...
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... Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6986AS. 12.5nS/DIV Figure 22. FDS6986AS SyncFET body diode reverse recovery characteristic. ...
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... Pulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 29. Switching Time Test Circuit + Figure 26. Unclamped Inductive Waveforms + 10V DUT Charge, (nC) Figure 28. Gate Charge Waveform d(ON 90 DUT 50% 10% 0V Figure 30. Switching Time Waveforms BV DSS G(TOT OFF t d(OFF 90% 10% 10% 90% 50% Pulse Width FDS6986AS Rev A (X) ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...