FDS6900AS Fairchild Semiconductor, FDS6900AS Datasheet - Page 3

MOSFET N-CH DUAL 30V 8SOIC

FDS6900AS

Manufacturer Part Number
FDS6900AS
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6900AS

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 6.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.9A, 8.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
25 S, 21 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.9 A, 8.2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
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Price
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FDS6900AS
Manufacturer:
Fairchild Semiconductor
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Quantity:
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Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. FDS6900AS_NL is a lead free product. The FDS6900AS_NL marking will appear on the reel label.
Q
Q
Q
Q
Switching Characteristics
I
T
Q
T
Q
V
the drain pins. R
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
S
θJA
rr
rr
SD
g
g
gs
gd
rr
rr
(TOT)
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Diode Forward
Voltage
θJC
is guaranteed by design while R
Parameter
a)
78°C/W when
mounted on a
0.5in
oz copper
2
pad of 2
(Note 2)
θCA
is determined by the user's board design.
(continued)
I
d
I
d
V
V
V
Q2:
V
Q1:
V
F
F
iF
iF
GS
GS
GS
DS
DS
= 8.2 A,
= 6.9 A,
/d
/d
= 15 V, I
= 15 V, I
= 0 V, I
= 0 V, I
= 0 V, I
t
t
= 300 A/µs
= 100 A/µs
Test Conditions
S
S
S
D
D
= 2.3 A
= 5 A
= 1.3 A
= 8.2A
= 6.9A
b)
T
A
= 25°C unless otherwise noted
125°C/W when
mounted on a
0.02 in
2 oz copper
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
2
pad of
Type Min Typ Max Units
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
c)
5.8
6.1
1.6
1.7
2.1
2.2
0.6
0.7
0.7
10
11
15
19
10
6
135°C/W when
mounted on a
minimum pad.
8.2
8.5
2.3
1.3
0.7
1.0
1.2
15
15
FDS6900AS Rev B (X)
nC
nC
nC
nC
nC
nC
ns
ns
A
V

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