FDD3510H Fairchild Semiconductor, FDD3510H Datasheet - Page 5

• Manufacturer Part Number: FDD3510H
• Description: IC MOSFET DUAL N/P 80V DPAK-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD3510H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 40V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ Q1 or 2.8 A @ Q2
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3510HTR

FDD3510H Rev.C
Typical Characteristics (Q1 N-Channel)
0.05
0.1
50
10
10
1
5
4
3
2
1
Figure 7.
0.01
8
6
4
2
0
0.5
0
THIS AREA IS
LIMITED BY r
I
Figure 9.
D
Figure 11. Forward Bias Safe
= 4.3A
1
2
V
Switching Capability
DS
Gate Charge Characteristics
t
V
, DRAIN to SOURCE VOLTAGE (V)
AV
DD
Operating Area
DS(on)
, TIME IN AVALANCHE(ms)
Unclamped Inductive
4
Q
= 30V
0.1
SINGLE PULSE
T
R
T
g
J
C
, GATE CHARGE(nC)
θ
JC
= MAX RATED
= 25
V
DD
= 3.5
T
J
6
o
= 40V
C
= 125
o
10
C/W
o
C
8
V
DD
1
= 50V
10
T
J
= 25
12
o
100
C
10ms
100ms
100us
1ms
DC
10
14
T
J
5
= 25°C unless otherwise noted
1000
15
12
10
10
10
10
100
10
9
6
3
0
10
Figure 10.
25
10
5
4
3
2
0.1
Figure 12.
-6
R
V
Figure 8.
f = 1MHz
V
θ
GS
Current vs Case Temperature
JC
GS
= 3.5
= 10V
10
= 0V
50
V
-5
DS
o
Power Dissipation
Maximum Continuous Drain
C/W
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
C
t, PULSE WIDTH (sec)
,
Single Pulse Maximum
Capacitance vs Drain
CASE TEMPERATURE (
10
1
-4
75
V
GS
= 6V
10
-3
V
100
GS
= 10V
10
SINGLE PULSE
R
T
10
C
θ
-2
JC
o
= 25
C )
= 3.5
125
o
C
www.fairchildsemi.com
10
o
C
C/W
C
-1
C
oss
rss
iss
150
100
1