NDS8934 Fairchild Semiconductor, NDS8934 Datasheet

MOSFET P-CH DUAL 20V 3.8A 8-SOIC

NDS8934

Manufacturer Part Number
NDS8934
Description
MOSFET P-CH DUAL 20V 3.8A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS8934

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 3.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 4.5V
Input Capacitance (ciss) @ Vds
1120pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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_________________________________________________________________________________
Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
NDS8934
Dual P-Channel Enhancement Mode Field Effect Transistor
,T
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly
suited for low voltage applications such as notebook
computer power management and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
JA
JC
General Description
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1)
Features
-3.8A, -20V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
6
5
8
7
R
DS(ON)
DS(ON)
NDS8934
-55 to 150
-3.8
= 0.1
= 0.07
-20
-15
1.6
0.9
78
40
-8
2
1
@ V
@ V
GS
GS
= -2.7V.
= -4.5V
4
3
2
1
DS(ON)
March 1996
.
NDS8934.SAM
Units
°C/W
°C/W
W
°C
V
V
A

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NDS8934 Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) March 1996 = 0. -4.5V DS(ON 0 -2.7V. DS(ON DS(ON NDS8934 -20 -8 -3.8 -15 2 1.6 1 0.9 -55 to 150 78 40 Units °C °C/W °C/W NDS8934.SAM ...

Page 2

... - 70° -250 µ 125° -4 -3 125° - 1.0 MHz -4 GEN GEN Min Typ Max Units - µA -5 µA 100 nA -100 nA -0.5 -0 -0.3 -0.5 -0.8 0.06 0.07 0.085 0.14 0.082 0.1 - 1120 pF 470 pF 145 2.4 nC 5.5 nC NDS8934.SAM ...

Page 3

... C/W when mounted on a 0.02 in pad of 2oz cpper 135 C/W when mounted on a 0.003 in pad of 2oz cpper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.. Conditions -1.3 A (Note Min Typ Max Units -1.3 -0.75 -1.2 is guaranteed NDS8934.SAM A V ...

Page 4

... Figure 6. Gate Threshold Variation with V = -2.5V GS -2.7 -3.0 -3.5 -4.0 -4 -12 - DRAIN CURRENT (A) D Voltage and Drain Current. = -4. 125°C J 25°C -55° -12 - DRAIN CURRENT (A) D Current and Temperature -250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature. -5.0 -20 -20 GS 125 150 NDS8934.SAM ...

Page 5

... C iss oss rss Figure 10. Gate Charge Characteristics -55°C J 25°C 125°C -12 -16 - 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD with Current and Temperature . V = -5.0V DS -10V -15V GATE CHARGE (nC) g 1.4 1 NDS8934.SAM ...

Page 6

... FR-4 Board Still Air 2 0 Figure 13. Maximum Steady-State Drain Current versus Copper Mounting Pad Area TIME (sec 4.5"x5" FR-4 Board Still Air V = -4. 0.1 0.2 0.3 0.4 2 2oz COPPER MOUNTING PAD AREA ( ( See Note 1c JA P(pk ( Duty Cycle 0.5 NDS8934.SAM ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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