FDQ7238AS Fairchild Semiconductor, FDQ7238AS Datasheet

MOSFET N-CH DUAL 30V 14-SOIC

FDQ7238AS

Manufacturer Part Number
FDQ7238AS
Description
MOSFET N-CH DUAL 30V 14-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDQ7238AS

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.2 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A, 11A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 15V
Input Capacitance (ciss) @ Vds
920pF @ 15V
Power - Max
1.3W, 1.1W
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width, Fused Leads)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0132 Ohm @ 10 V Ohm @ Q1
Forward Transconductance Gfs (max / Min)
58 S, 43 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+ /- 20 V
Continuous Drain Current
11 A @ Q1
Power Dissipation
1800 mW @ Q1
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDQ7238AS
Manufacturer:
DALLAS
Quantity:
143
Part Number:
FDQ7238AS
Manufacturer:
FAIR
Quantity:
1 000
Part Number:
FDQ7238AS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
Symbol
D
FDQ7238AS
Dual Notebook Power Supply N-Channel PowerTrench
General Description
The FDQ7238AS is designed to replace two single SO-
8 MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode.
©2008 Fairchild Semiconductor Corporation
J
DSS
GSS
D
θJA
, T
Device Marking
SO-14
STG
FDQ7238AS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
pin 1
TM
technology. The FDQ7238AS
Vin
- Continuous
- Pulsed
FDQ7238AS
G1
Parameter
Device
G2
S2
T
A
= 25°C unless otherwise noted
S2
S2
(Note 1a & 1b)
(Note 1c & 1d)
(Note 1c & 1d)
(Note 1a & 1b)
(Note 1a)
Reel Size
13”
Features
Q2: 14 A, 30V. R
Q1: 11 A, 30V. R
Q2
±20
2.4
1.3
30
14
50
52
94
Tape width
−55 to +150
16mm
®
R
R
in SO-14 Package
DS(on)
DS(on)
DS(on)
DS(on)
= 8.7 mΩ @ V
= 10.5 mΩ @ V
= 13.2 mΩ @ V
= 16 mΩ @ V
Q1
±20
118
1.8
1.1
30
11
50
68
May 2008
FDQ7238AS Rev A1(X)
GS
2500 units
GS
Quantity
GS
GS
= 4.5V
= 10V
= 4.5V
= 10V
Units
°C/W
°C
W
V
V
A

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FDQ7238AS Summary of contents

Page 1

... FDQ7238AS Dual Notebook Power Supply N-Channel PowerTrench General Description The FDQ7238AS is designed to replace two single SO- 8 MOSFETs power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using TM Fairchild’s SyncFET technology ...

Page 2

... T = 125° 4 11 125° 1.0 MHz 15mV 1.0 MHz mV/°C 24 µA 500 1 5.6 mA µA 40 ±100 1.7 3 −3 mV/°C −4 7.2 8.7 mΩ 8.7 10.5 10 12 1530 pF 920 440 pF 190 160 pF 120 Ω 1.9 1.9 FDQ7238AS Rev A1 (X) ...

Page 3

... Type Min Typ Max Units 4 2 3 2.1 Q2 0.5 0.7 V 0.4 Q1 0.7 1 118°C/W when mounted on a minimum pad copper (Q1). d) 94°C/W when mounted on a minimum pad copper (Q2). FDQ7238AS Rev A1(X) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V 3.5V 4.0V 4.5V 6. DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDQ7238AS Rev A1 (X) 10. ...

Page 5

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 94°C/W θ 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 94°C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDQ7238AS Rev A1 ( 1000 ...

Page 6

... Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDQ7238AS Q2. TIME : 12nS/div Figure 12. FDQ7238AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET(FDS6670A) ...

Page 7

... C 0.01 0.001 0.0001 0 0.2 3 3.5 4 Figure 20. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 6.0V 10. DRAIN CURRENT ( 5. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDQ7238AS Rev A1 ( 1.4 ...

Page 8

... Figure 24. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 118°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 118 °C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDQ7238AS Rev A1 (X) 30 1000 ...

Page 9

... Fairchild Semiconductor. The datasheet is for reference information only. ® The Power Franchise tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ Definition Rev. I34 FDQ7238AS Rev.A1(X) ...

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