EM6M2T2R Rohm Semiconductor, EM6M2T2R Datasheet

no-image

EM6M2T2R

Manufacturer Part Number
EM6M2T2R
Description
MOSFET N/P-CH 20V 200MA EMT6
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of EM6M2T2R

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1 Ohm @ 200mA, 4V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
1V @ 1mA
Input Capacitance (ciss) @ Vds
25pF @ 10V
Power - Max
120mW
Mounting Type
Surface Mount
Package / Case
EMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EM6M2T2R
0
Company:
Part Number:
EM6M2T2R
Quantity:
9 000
1.2V Drive Nch+Pch MOSFET
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
1) Nch MOSFET and Pch MOSFET are put in EMT6 package.
2) High-speed switching.
3) Low voltage drive (1.2V drive).
4) Built-in G-S Protection Diode.
Switching
∗1 Pw
∗2 Each terminal mounted on a recommended land
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
c
www.rohm.com
Type
EM6M2
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
EM6M2
2009 ROHM Co., Ltd. All rights reserved.
10µs, Duty cycle
Parameter
Package
Code
Basic ordering unit (pieces)
1%
Continuous
Pulsed
Taping
8000
T2R
Symbol
V
V
Tstg
Tch
I
P
I
DSS
GSS
DP
D
D
∗1
∗2
Tr1 : N-ch
±200
±400
± 8
20
−55 to +150
Limits
150
120
150
Tr2 : P-ch
±200
±400
−20
±10
1/7
mW / ELEMENT
mW / TOTAL
Dimensions (Unit : mm)
Inner circuit
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
EMT6
∗2
Unit
mA
mA
°C
°C
V
V
(6)
(1)
∗1
Abbreviated symbol : M02
(2)
(5)
Each lead has same dimensions
∗1
(4)
(3)
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
2009.07 - Rev.A

Related parts for EM6M2T2R

EM6M2T2R Summary of contents

Page 1

Drive Nch+Pch MOSFET EM6M2 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode. Applications ...

Page 2

EM6M2 N-ch Electrical characteristics (Ta=25°C) Parameter Symbol Min. Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ ...

Page 3

EM6M2 N-ch Electrical characteristic curve 0.5 Ta=25°C Pulsed 0 1. 1. 2. 0.2 0.4 ...

Page 4

EM6M2 10V DS Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 DRAIN-CURRENT : I [A] D Fig.10 Forward Transfer Admittance vs. Drain Current 1000 Ta =25°C =10V =10Ω ...

Page 5

EM6M2 P-ch Electrical characteristic curve 0.2 Ta=25°C Pulsed V = -10. -4. -3. -2. -2.0V 0 -1. -1. 0.05 V ...

Page 6

EM6M2 1 -10V DS Pulsed Ta=-25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 DRAIN-CURRENT : -I [A] D Fig.10 Forward Transfer Admittance vs. Drain Current 1000 Ta=25° -10V DD t (off =-4. ...

Page 7

EM6M2 N-ch Measurement circuit D.U. Fig.1-1 Switching Time Measurement circuit P-ch Measurement circuit Fig.2-1 Switching Time ...

Page 8

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

Related keywords