EM6M2T2R Rohm Semiconductor, EM6M2T2R Datasheet - Page 2

• Manufacturer Part Number: EM6M2T2R
• Description: MOSFET N/P-CH 20V 200MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EM6M2T2R

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 200mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 120mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

N-ch
P-ch
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
○
EM6M2
∗Pulsed
∗Pulsed
∗ Pulsed
∗ Pulsed
Forward voltage
Forward voltage
c
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Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Parameter
Parameter
V
V
Symbol
Symbol
Symbol
Symbol
R
R
V
V
(BR) DSS
(BR) DSS
t
t
t
t
I
C
I
C
I
DS (on)
C
C
V
I
DS (on)
C
C
V
GS (th)
d (on)
d (off)
GS (th)
d (on)
d (off)
GSS
DSS
Y
GSS
DSS
Y
t
t
t
t
oss
oss
rss
SD
rss
SD
iss
iss
fs
r
f
fs
r
f
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
−0.3
Min.
Min.
Min.
Min.
−20
0.3
0.2
0.2
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
Typ.
Typ.
115
0.7
0.8
1.0
1.2
1.6
0.8
1.0
1.3
1.6
2.4
25
10
10
10
15
10
10
17
17
5
6
6
4
−
−
−
−
−
−
−
−
−
−
−
−
Max.
Max.
Max.
Max.
−1.0
−1.2
±10
±10
1.0
1.0
1.2
1.4
2.4
4.8
1.2
1.2
1.5
2.2
3.5
9.6
−1
−
1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
Unit
Unit
µA
µA
µA
µA
pF
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
Ω
Ω
Ω
Ω
Ω
S
V
V
V
Ω
Ω
Ω
Ω
Ω
S
V
V
I
V
V
I
I
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
I
V
I
V
V
I
I
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
I
D
D
D
D
D
D
D
S
D
D
D
D
D
D
D
S
2/7
GS
DS
DS
DS
DS
GS
DD
GS
GS
DS
DS
DS
DS
GS
DD
GS
= 1mA, V
= 200mA, V
= 200mA, V
= 200mA, V
= 40mA, V
= 20mA, V
= 150mA
L
G
= 100mA, V
= −1mA, V
= −200mA, V
= −100mA, V
= −100mA, V
= −40mA, V
= −10mA, V
= −100mA
L
G
= −200mA, V
= 10Ω
= 10Ω
= 20V, V
= 10V, I
= 10V, I
= 10V
= 4.0V
= −20V, V
= −10V, I
= −10V, I
= −10V
= −4.5V
= ±8V, V
= 0V
= ±10V, V
= 0V
67Ω
100Ω
10 V
−10 V
Conditions
Conditions
Conditions
Conditions
GS
D
D
GS
GS
GS
GS
DS
= 1mA
= 200mA
D
D
=0V
GS
GS
GS
GS
GS
GS
GS
DS
= −100µA
= −200mA
=0V
=0V
= 1.5V
= 1.2V
=0V
GS
GS
GS
GS
= 4.0V
= 2.5V
= 1.8V
=0V
=0V
=0V
= −1.5V
= −1.2V
= −4.5V
= −2.5V
= −1.8V
=0V
2009.07 - Rev.A
Data Sheet