EM6M2T2R Rohm Semiconductor, EM6M2T2R Datasheet - Page 4

• Manufacturer Part Number: EM6M2T2R
• Description: MOSFET N/P-CH 20V 200MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EM6M2T2R

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 200mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 120mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

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EM6M2
c
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0.1
1000
1
0.01
100
10
0.01
1
V
Pulsed
DS
= 10V
Fig.10 Forward Transfer Admittance
Fig.13 Switching characteristics
DRAIN CURRENT : I
vs. Drain Current
DRAIN-CURRENT : I
0.1
0.1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
D
D
(A)
[A]
t
t
t
d(off)
t
d(on)
f
Ta =25°C
V
V
R
Pulsed
r
DD
GS
G
=10Ω
=10V
=4V
1
1
100
10
0.01
1
0.1
0.01
1
0.0
Ta=25°C
f=1MHz
V
GS
SOURCE-DRAIN VOLTAGE : V
=0V
DRAIN-SOURCE VOLTAGE : V
Fig.11 Source current vs.
Fig.14 Typical Capacitance
0.1
Crss
0.5
vs. Drain-Source Voltage
source-drain voltage
4/7
1
Coss
1
Ta=125°C
Ciss
−25°C
10
75°C
25°C
V
Pulsed
SD
GS
DS
(V)
=0V
[V]
1.5
100
2.5
1.5
0.5
2
1
0
0
Fig.12 Static Drain-Source On-State
I
D
= 0.02A
GATE-SOURCE VOLTAGE : V
2
Resistance vs. Gate Source Voltage
I
D
= 0.2A
4
6
2009.07 - Rev.A
Ta=25°C
Pulsed
8
Data Sheet
GS
[V]
10