EM6M2T2R Rohm Semiconductor, EM6M2T2R Datasheet - Page 5

• Manufacturer Part Number: EM6M2T2R
• Description: MOSFET N/P-CH 20V 200MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EM6M2T2R

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 200mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 120mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

P-ch
○
EM6M2
c
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Electrical characteristic curve
2009 ROHM Co., Ltd. All rights reserved.
10000
10000
1000
1000
100
0.15
0.05
100
0.2
0.1
0.001
0.001
0
0
Ta=25°C
Pulsed
V
Pulsed
Fig.4 Static Drain-Source On-State
GS
Fig.1 Typical output characteristics( Ⅰ )
Fig.7 Static Drain-Source On-State
= -1.8V
DRAIN-SOURCE VOLTAGE : -V
DRAIN-CURRENT : -I
DRAIN-CURRENT : -I
Resistance vs. Drain Current( Ι )
0.2
Resistance vs. Drain Current( Ⅳ )
V
GS
0.01
0.01
= -1.5V
V
GS
= -1.2V
0.4
V
V
V
GS
GS
GS
= -10.0V
= -4.5V
= -3.2V
0.6
V
V
V
V
V
D
D
0.1
[A]
0.1
[A]
GS
GS
GS
GS
GS
V
V
V
V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
= -1.2V
= -1.5V
= -1.8V
= -2.5V
= -4.5V
GS
GS
GS
GS
= -1.0V
= -2.5V
= -2.0V
= -1.8V
0.8
Ta=25°C
Pulsed
DS
[V]
1
1
1
10000
1000
0.15
0.05
10000
100
0.2
0.1
1000
100
0
0.001
0
0.001
V
Pulsed
GS
V
Pulsed
Fig.2 Typical output characteristics( Ⅱ )
= -4.5V
GS
DRAIN-SOURCE VOLTAGE : -V
= -1.5V
Fig.5 Static Drain-Source On-State
Fig.8 Static Drain-Source On-State
2
V
V
V
GS
GS
GS
V
DRAIN-CURRENT : -I
Resistance vs. Drain Current( Π )
GS
= -2.5V
= -1.8V
= -1.5V
0.01
DRAIN-CURRENT : -I
Resistance vs. Drain Current( Ⅴ )
= -4.5V
4
0.01
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
GS
6
= -1.0V
0.1
V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
GS
5/7
= -1.2V
D
[A]
D
Ta=25°C
Pulsed
8
[A]
DS
[V]
10
1
0.1
0.0001
10000
0.001
1000
0.01
100
0.1
10000
1000
1
0.001
100
0
V
Pulsed
0.001
V
Pulsed
DS
Fig.6 Static Drain-Source On-State
GS
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
V
Pulsed
= -10V
Fig.3 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : -V
= -2.5V
GS
= -1.2V
DRAIN-CURRENT : -I
Resistance vs. Drain Current( Ⅲ )
Fig.9 Static Drain-Source On-State
DRAIN-CURRENT : -I
0.01
0.5
Resistance vs. Drain Current( Ⅵ )
0.01
0.1
D
1
[A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
D
GS
[A]
[V]
1.5
1
2009.07 - Rev.A
0.1
Data Sheet