EM6M2T2R Rohm Semiconductor, EM6M2T2R Datasheet - Page 7
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EM6M2T2R
Manufacturer Part Number
EM6M2T2R
Description
MOSFET N/P-CH 20V 200MA EMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.EM6M2T2R.pdf
(8 pages)
Specifications of EM6M2T2R
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1 Ohm @ 200mA, 4V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
1V @ 1mA
Input Capacitance (ciss) @ Vds
25pF @ 10V
Power - Max
120mW
Mounting Type
Surface Mount
Package / Case
EMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
N-ch
P-ch
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
○
EM6M2
c
www.rohm.com
Measurement circuit
Measurement circuit
Notice
Fig.2-1 Switching Time Measurement circuit
2009 ROHM Co., Ltd. All rights reserved.
Fig.1-1 Switching Time Measurement circuit
R
R
G
G
V
GS
V
GS
D.U.T.
I
D
I
D
R
V
L
DD
R
V
L
DD
V
V
DS
DS
V
V
V
GS
V
GS
DS
DS
t
d (on)
t
d ( on)
10%
10%
t
50%
Fig.2-2 Switching Waveforms
on
50%
t
Fig.1-2 Switching Waveforms
on
10%
t
r
90%
t
r
Pulse Width
Pulse Width
10%
90%
7/7
90%
90%
t
d (off)
t
d ( off)
t
off
50%
t
off
t
f
t
10%
f
50%
90%
10%
90%
2009.07 - Rev.A
Data Sheet