EM6M2T2R Rohm Semiconductor, EM6M2T2R Datasheet - Page 7

• Manufacturer Part Number: EM6M2T2R
• Description: MOSFET N/P-CH 20V 200MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EM6M2T2R

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 200mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 120mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

N-ch
P-ch
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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EM6M2
c
www.rohm.com
Measurement circuit
Measurement circuit
Notice
Fig.2-1 Switching Time Measurement circuit
2009 ROHM Co., Ltd. All rights reserved.
Fig.1-1 Switching Time Measurement circuit
R
R
G
G
V
GS
V
GS
D.U.T.
I
D
I
D
R
V
L
DD
R
V
L
DD
V
V
DS
DS
V
V
V
GS
V
GS
DS
DS
t
d （on）
t
d （ on）
10%
10%
t
50%
Fig.2-2 Switching Waveforms
on
50%
t
Fig.1-2 Switching Waveforms
on
10%
t
r
90%
t
r
Pulse Width
Pulse Width
10%
90%
7/7
90%
90%
t
d （off）
t
d （ off）
t
off
50%
t
off
t
f
t
10%
f
50%
90%
10%
90%
2009.07 - Rev.A
Data Sheet