EM6M2T2R Rohm Semiconductor, EM6M2T2R Datasheet - Page 3

• Manufacturer Part Number: EM6M2T2R
• Description: MOSFET N/P-CH 20V 200MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EM6M2T2R

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 200mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 120mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

N-ch
○
EM6M2
c
www.rohm.com
Electrical characteristic curve
2009 ROHM Co., Ltd. All rights reserved.
10000
10000
1000
1000
100
100
0.5
0.4
0.3
0.2
0.1
0.001
0
0.001
0
Fig.4 Static Drain-Source On-State
Fig.7 Static Drain-Source On-State
Ta= 25°C
Pulsed
V
Pulsed
GS
Fig.1 Typical Output Characteristics( Ⅰ )
= 1.8V
DRAIN-SOURCE VOLTAGE : V
DRAIN-CURRENT : I
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅰ )
Resistance vs. Drain Current( Ⅲ )
0.2
0.01
0.01
V
V
V
0.4
GS
GS
GS
= 4.5V
= 2.5V
= 1.8V
V
GS
0.6
= 1.5V
D
D
[A]
[A]
V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
0.1
V
V
V
V
V
GS
GS
GS
GS
GS
GS
V
= 1.3V
GS
= 1.2V
= 1.5V
= 1.8V
= 2.5V
= 4.0V
= 1.2V
0.8
Ta=25°C
Pulsed
DS
[V]
1
1
1
10000
10000
1000
1000
100
100
0.5
0.4
0.3
0.2
0.1
0
0.001
0.001
0
V
Pulsed
V
Pulsed
Fig.8 Static Drain-Source On-State
GS
GS
Fig.5 Static Drain-Source On-State
= 4.0V
= 1.5V
DRAIN-SOURCE VOLTAGE : V
Fig.2 Typical Output Characteristics( Ⅱ )
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅳ )
V
V
2
GS
GS
Resistance vs. Drain Current( Ⅱ )
= 2.5V
= 1.8V
DRAIN-CURRENT : I
V
0.01
0.01
GS
= 1.5V
4
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
V
GS
6
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
D
= 1.3V
0.1
0.1
[A]
GS
3/7
= 1.2V
D
[A]
Ta=25°C
Pulsed
8
DS
[V]
10
1
1
10000
10000
1000
1000
100
100
0.001
0.001
0.0001
0.00001
Fig.9 Static Drain-Source On-State
0.001
0.01
V
Pulsed
V
Pulsed
0.1
GS
GS
0.0
1
Fig.6 Static Drain-Source On-State
= 2.5V
= 1.2V
V
Pulsed
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅴ )
DS
Fig.3 Typical transfer characteristics
GATE-SOURCE VOLTAGE : V
=10V
Resistance vs. Drain Current( Ⅱ )
DRAIN-CURRENT : I
0.01
0.01
0.5
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
D
[A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
0.1
1.0
Ta=125°C
D
[A]
−25°C
75°C
25°C
GS
(V)
2009.07 - Rev.A
1
1
1.5
Data Sheet